TRIQUINT TGA8334-SCC

Product Data Sheet
2 - 20 GHz Power Amplifier
TGA8334-SCC
Key Features and Performance
•
•
•
•
•
•
•
2 to 20 GHz Frequency Range
0.4-W Output Power at 1 dB Gain
Compression at Midband
Positive Gain Slope Across Frequency
On-Chip Input DC-Blocking Capacitor
1.8:1 Input SWR at Midband, 1.3:1
Output SWR at Midband
8 dB Gain with +/- 1 dB Flatness
3.1750 x 1.8034 x 0.1524 mm (0.125 x
0.071 x 0.006 in.)
Description
The TriQuint TGA8334-SCC is a GaAs monolithic dual-gate distributed amplifier.
Small-signal gain is typically 8 dB with positive gain slope across the band. Input
and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs
provide more than 26 dB output power at 1 dB gain compression at midband.
Ground is provided to the circuitry through vias to the backside metallization.
The TGA8334-SCC is directly cascadable with other broadband TriQuint GaAs
amplifiers, such as the TGA8300-SCC, TGA8622-SCC, and TGA8220-SCC. This
general power amplifier is suitable for a variety or wide-band applications such as
distributed networks, logging stages and oscillator buffers.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes. The TGA8334-SCC is supplied in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet
TGA8334-SCC
TYPICAL
OUTPUT POWER
P1dB
TYPICAL
SMALL-SIGNAL
POWER GAIN
TYPICAL
RETURN LOSS
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
TGA8334-SCC
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+……………………………………………………………………………………9 V
Positive supply current, I+…..…………………………………………………………………………………IDSS
Negative supply voltage range, V-……………………………………………………………………………-5 V to 0 V
Gain control voltage range, V CTRL…………………………………………………………………………… -5 V to 4 V
Gain control voltage range w ith respect to positive supply voltage, V CT RL…………….………………. 0 V to -10 V
Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *………………………………….. 7.2 W
Input continuous w ave pow er, PIN………………………………………………………………………. 27 dBm
Operating Channel temperature, TCH **…………………………………………………………………… 150oC
Mounting temperature (30 sec.), TM………………………………………………………………………. 320oC
Storage temperature range, TSTG………………………………………………………………………….. -65 to 150oC
Ratings over operating channel tem perature range, TCH (unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25oC base-plate temperature, derate linearly at the rate of 15.2 mW/oC.
** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that
channel temperature be maintained at the low est possible level. These ratings apply to each individual FET.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
TGA8334-SCC
TYPICAL S-PARAMETERS
F re que nc y
S 11
S 21
S 12
S 22
GAIN
(GHz)
M AG
ANG(°)
M AG
ANG(°)
M AG
ANG(°)
M AG
ANG(°)
(dB)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
19.0
19.5
20.0
0.62
0.40
0.30
0.24
0.21
0.19
0.16
0.14
0.12
0.09
0.06
0.04
0.05
0.09
0.14
0.18
0.22
0.25
0.27
0.29
0.29
0.27
0.25
0.20
0.16
0.13
0.12
0.14
0.17
0.19
0.22
0.21
0.19
0.14
0.09
0.06
0.06
0.08
0.05
-67
-103
-126
-146
-163
-180
166
151
138
128
125
149
-178
-172
178
165
151
136
122
107
93
81
69
59
57
64
74
80
83
71
56
38
18
-6
-26
-37
-42
-81
-103
2.156
2.092
2.110
2.132
2.156
2.181
2.213
2.241
2.294
2.338
2.374
2.408
2.431
2.459
2.471
2.458
2.444
2.432
2.430
2.451
2.465
2.470
2.492
2.532
2.521
2.471
2.446
2.447
2.457
2.507
2.557
2.572
2.563
2.574
2.562
2.563
2.561
2.501
2.430
154
143
128
113
96
80
63
47
30
12
-6
-24
-42
-61
-79
-98
-117
-135
-153
-172
170
151
132
111
90
70
51
31
10
-11
-34
-57
-80
-104
-129
-154
151
122
94
0.001
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.009
0.009
0.009
0.009
0.008
0.008
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.014
0.012
0.007
0.004
0.003
0.006
0.007
0.007
0.007
0.005
0.006
0.009
0.012
0.015
0.015
0.015
42
65
81
80
75
66
56
46
32
18
3
-14
-27
-47
-66
-83
-100
-117
-134
-150
-165
176
155
133
107
89
89
133
134
110
80
40
1
-33
-75
-114
179
144
108
0.36
0.35
0.34
0.33
0.31
0.29
0.27
0.24
0.22
0.19
0.17
0.15
0.15
0.15
0.15
0.16
0.16
0.16
0.16
0.14
0.13
0.11
0.08
0.07
0.08
0.09
0.10
0.09
0.08
0.07
0.05
0.07
0.11
0.15
0.18
0.19
0.14
0.06
0.10
-170
171
159
150
140
133
126
120
116
115
115
118
122
124
126
125
123
120
115
109
104
97
98
115
134
133
123
114
108
107
124
150
153
147
137
122
93
102
-175
6.7
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.2
7.4
7.5
7.6
7.7
7.8
7.9
7.8
7.8
7.7
7.7
7.8
7.8
7.9
7.9
8.1
8.0
7.9
7.8
7.8
7.8
8.0
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.0
7.7
V D = 8 V, VCTRL = 1 V, I D = 50% IDSS, T A = 25oC,
The reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly
Diagram.” The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
TGA8334-SCC
RF CHARACTERISTICS
TES T C ONDITIONS
TYP
Gp
Sma ll-s ignal pow e r gain
P AR AM ETER
f = 2 to 20 GHz
8
dB
P 1dB
Output pow er a t 1–dB gain
f = 2 to 14 GHz
26
dBm
compre s s ion
f =14 to 18 GHz
25
Gain fla tne s s
f = 2 to 20 GHz
±1
dB
f = 2 GHz
1.6:1
-
∆Gp
SWR(in)
SWR(out)
IP 3
Input s ta nding w ave ratio
Output s tanding w ave ra tio
Output third–orde r inte rce pt point
UNIT
f = 9 GHz
1.7:1
-
f =18 GHz
1.1:1
-
f = 2 GHz
2.0:1
-
f = 9 GHz
1.4:1
-
f =18 GHz
1.5:1
-
f = 2 GHz
38
f = 9 GHz
41
f =18 GHz
38
dBm
V D = 8 V, VCNTR = 1 V, I D = 50% IDSS, T A = 25oC,
DC CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
M IN M AX UNIT
IDS S Total zero–gate –voltage drain curre nt a t s a tura tion V DS = 0.5 V to 3.5 V, V GS = 0 V 630 1170 mA
TA = 25OC
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.
THERMAL
INFORMATION
P AR AM ETER
TES T C ONDITION
NOM
UNIT
R θJ C The rmal res is ta nce (channel to bac ks ide ) V D = 8 V, ID = 50% IDS S , V CT RL = 1 V 18.7 °C/W
EQUIVALENT
SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
TGA8334-SCC
RECOMMENDED
TEST
CONFIGURATION
RECOMMENDED
ASSEMBLY
DIAGRAM
RF connections: Bond using two 1.0-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and
RF Output.
DC blocks required at RF Output port.
Close placement of external components is essential to stability.
Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
TGA8334-SCC
MECHANICAL
DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7