Product Data Sheet .1 - 3.5 GHz Low Noise Amplifier TGA8061-SCC Key Features and Performance • • • • • • • 100 MHz to 3.5 GHz Frequency Range 3 dB Bandwidth Exceeds 5 Octaves 2.4 dB Noise Figure with Low Input and Output SWR 18 dB Gain 15 dBm Output Power at 1 dB Gain Compression Operates from Single 12V Supply 1.524 x 1.524 x 0.102 mm (0.060 x 0.060 x 0.004 in.) Description The TriQuint TGA8061-SCC is a GaAs monolithic low noise amplifier intended for use as a universal gain block in applications requiring simultaneous flat gain, low noise figure, and low SWR over a very wide bandwidth. Three FET stages with resistive feedback maintain highly repeatable linear phase and amplitude characteristics. The high isolation, low SWR, and unconditional stability of the TGA8061-SCC make it ideal for following or driving mixers and filters. Small size and low external parts count simplify system design and integration into higher-level assemblies. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wire bonding processes. Ground is provided to the circuit through vias to the backside metallization. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGA8061-SCC TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGA8061-SCC ABSOLUTE MAXIMUM RATINGS Positive supply voltage, V+……………………………………………………………………………16 V Bias control voltage range, V ADJ ………………………………………………………………………0 V to 15 V Positive supply current, I+…..…………………………………………………………………………200 mA Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *………………………………4.3 W Operating Channel temperature, TCH **………………………………………………………………150oC 320oC Mounting temperature (30 sec.), TM…………………………………………………………………… -65 to 150oC Storage temperature range, TSTG……………………………………………………………………… Ratings over operating channel tem perature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25oC base-plate temperature, derate linearly at the rate of 9.1 mW/oC. ** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. These ratings apply to each individual FET. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGA8061-SCC TYPICAL S-PARAMETERS S 11 F re que nc y S 21 S 12 S 22 GAIN (GHz) M AG ANG(o) M AG ANG(o) M AG ANG(o) M AG ANG(o) (dB ) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 0.40 0.26 0.22 0.21 0.21 0.21 0.19 0.19 0.19 0.18 0.18 0.17 0.17 0.16 0.16 0.16 0.16 0.16 0.16 0.17 0.18 0.18 0.19 0.21 0.22 0.23 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.32 -46 -44 -40 -36 -37 -41 -41 -41 -42 -42 -43 -44 -45 -46 -47 -49 -52 -58 -65 -71 -78 -83 -88 -91 -94 -96 -97 -97 -97 -97 -95 -94 -93 -91 -90 7.93 8.29 8.39 8.42 8.45 8.47 8.47 8.46 8.47 8.46 8.48 8.47 8.46 8.45 8.39 8.31 8.23 8.20 8.20 8.22 8.22 8.20 8.15 8.09 8.01 7.92 7.81 7.70 7.56 7.44 7.29 7.16 7.03 6.88 6.74 0 -1 -7 -12 -16 -20 -25 -29 -33 -37 -41 -45 -49 -53 -58 -62 -66 -69 -73 -77 -81 -86 -90 -95 -99 -104 -108 -12 -17 -121 -125 -129 -133 -137 -141 0.0001 0.0010 0.0011 0.0019 0.0024 0.0012 0.0003 0.0000 0.0006 0.0010 0.0010 0.0012 0.0014 0.0018 0.0019 0.0020 0.0020 0.0020 0.0020 0.0022 0.0027 0.0030 0.0029 0.0031 0.0032 0.0034 0.0033 0.0038 0.0040 0.0041 0.0041 0.0044 0.0044 0.0050 0.0048 49 77 74 54 0 -54 -14 64 107 107 98 111 101 105 102 108 105 104 108 108 105 107 106 107 107 111 109 105 107 104 107 109 107 106 109 0.29 0.29 0.29 0.29 0.29 0.30 0.30 0.30 0.30 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.29 0.30 0.30 0.32 0.32 0.34 0.35 0.36 0.37 0.38 0.39 0.39 -3 -4 -5 -7 -8 -10 -11 -13 -14 -15 -16 -17 -19 -20 -22 -24 -26 -28 -31 -34 -37 -41 -45 -48 -51 -55 -58 -60 -62 -64 -65 -66 -67 -67 -67 18.0 18.4 18.5 18.5 18.5 18.6 18.6 18.5 18.6 18.6 18.6 18.6 18.5 18.5 18.5 18.4 18.3 18.3 18.3 18.3 18.3 18.3 18.2 18.2 18.1 18.0 17.9 17.7 17.6 17.4 17.3 17.1 16.9 16.8 16.6 V+ = 12 V, VO = 5 V, TA = 25oC The reference plane for S-parameter data is located at the center of device bond pads. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGA8061-SCC RF CHARACTERISTICS P AR AM ETER TES T C ONDITIONS 1.0 2.0 3.5 0.1 1.0 2.0 3.0 4.0 I P 3 Third–orde r inte rc e pt P 1dB 1–dB ga in c ompre s s ion TYP GHz GHz GHz GHz GHz GHz GHz GHz 26 25 22 15 16 16 14 12 UNIT dBm dBm V+ = 12 V, VO = 5 V, TA = 25oC P AR AMETER DC CHARACTERISTICS I+ Pos itive s upply c urre nt TEST C ONDITIONS V+ = 12 V, V O = 5 V, T A = 25 o C TYP UNIT 112 mA TA = 25oC EQUIVALENT SCHEMATIC TYPICAL BIAS NETWORK Select VADJ to set VO = 5 V+/- 0.5 V. Select resistor R1-R4 to set VD1 = 4.5 V +/- 0.5 V. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGA8061-SCC RECOMMENDED ASSEMBLY DIAGRAM Close placement of external components is essential to stability. VS1 connections: bond using three 1-mil diameter, 15 to 30-mil-length gold wires for optimum RF performance. The 100 pF capacitor should be placed within 15-mils of the chip, and source wires to this chip should be kept as short as possible. RECOMMENDED TEST CONFIGURATION TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGA8061-SCC MECHANICAL DRAWING GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7