TRIQUINT TQM7138

WIRELESS COMMUNICATIONS DIVISION
VREF
DATA SHEET
VCTRL
GND
TQM7138
GND
GND
Bias Control
Match
Match
3V HBT SiGe CDMA 4x4mm
POWER AMPLIFIER
MODULE
RFOUT
RFIN
GND
VCC1
VCC2
Features
§
Analog continuous bias capability with
excellen linearity over 1.9 to 3.0VDC and
temperature stability over –30C to 85C
§
Excellent PAE
§
Small 10 pin 4x4mm module
§
1xRTT Compatible
§
Industry compatible digital quiescent current
state control
§
Analog continuous bias capability
§
CMOS compatible logic input
§
Excellent Rx band noise performance
§
Internally matched input and output
§
Full ESD Protection
§
Low leakage current
Product Description:
The TQM7138 is a 3V, 2 stage SiGe HBT Power Amplifier Module designed for use in
mobile phones. Its extremely small 4x4mm package makes it ideal for today’s
extremely small data enabled phones. Its RF performance meets the requirements for
products designed to IS-95/98 standards. The TQM7138 provides the capability to be
operated in one, two, or continuous quiescent current modes. In digital quiescent
current mode operation, the TQM7138 is controlled from the base-band processor
using a CMOS compatible ICQ voltage control voltage. Overall current consumption of
the device is minimized by selecting the lowest ICQ state available for each power
output level. RF input and output matching is included within the module; therefore,
minimal external circuitry is required.
The TQM7138 gives excellent RF performance with low current consumption resulting
in longer talk times in portable applications. The small 4mm square surface mount
package is ideal for new generation small and light phones.
Electrical Specifications:
Parameter
Min
Frequency
CDMA mode
824
Pout1
CDMA Mode Efficiency1
AMPS Mode Output Power2
AMPS Mode
Typ
Efficiency2
Max
Units
849
MHz
28
dBm
35
%
31.5
dBm
51
%
Note 1:
Test Conditions CDMA Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF =3.00VDC, VCTRL=0.0VDC,
Tc=25°C, Pout = 28.0dBm
Note 2:
Test Conditions AMPS Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF=3.00VDC, VCTRL=0.0VDC,
Tc=25°C, Pout=31.5dBm
For additional information and latest specifications, see our website: www.triquint.com
Applications
§
Cellular Band CDMA IS-95/98 based mobile
phones.
§
Single-Mode, Dual Mode, and Tri Mode
CDMA/AMPS phones
1
TQM7138 - Preliminary
Data Sheet
Absolute Maximum Ratings
Symbol
Parameter
Absolute Maximum
Units
Value
VCC1, VCC2
Power Supply Voltage, no RF Applied
-0.5 to 6.0
RF Applied
-0.5 to 5.0
Bias reference voltages (VREF) and bias control voltage (VCTRL).
-0.5 to 5.0
VDC
2.5
W
Case Temperature, Survival
-40 to +100
°C
TSTG
Storage Temperature
-40 to +150
°C
RFIN
DC Grounded RF input, 50ohm RF impedance
0 to 0V
VDC
RFOUT
DC Blocked RF output, 50 ohm RF impedance
-20V to 20V
VDC
VREF, VCTRL
PDISS
Power Dissipation
TC
VDC
Note: The part may not survive all maximums applied simultaneously.
CDMA Mode Electrical Characteristics1,2,3
Parameter
Conditions
RF Frequency
Min.
Typ/Nom
824
Max.
Units
849
MHz
Pout, ICQ-hi
VCTRL = low
28
dBm
Large Signal Gain, ICQ-hi
Pout = 28dBm, VCTRL= low
30
dB
Large Signal Gain, ICQ-low
Pout = 16dBm, VCTRL = high
28
dB
Gain Variation vs. Temp.
-30 to 85 °C, Pout=28dBm
+0.7/-1.6
dB
Quiescent Current, ICQ-hi
VCTRL= low
120
mA
Quiescent Current, ICQ-low
VCTRL = low
69
mA
Icc
Pout = 28dBm, VCTRL = low
525
mA
Power Added Efficiency
Pout = 28dBm, VCTRL = low
35
%
Adjacent Channel Power (ACP)
Pout = 28dBm, VCTRL = low, IS-95 Standard
-49
dBc
Adjacent Channel Power (ACP-1xRTT)
Pout-=27.5dBm, VCTRL = low, IS-98 Standard,
-49
dBc
4.5 dB Peak to Average Ratio, CCDF=1%
Alternate Channel Power (ALT)
Pout = 28dBm, VCTRL = low, IS-95 Standard
-57
dBc
Alternate Channel Power (ALT-1xRTT)
Pout-=27.5dBm, VCTRL = low, IS-98 Standard,
-57
dBc
16
dBm
4.5 dB Peak to Average Ratio, CCDF=1%
Output Power Low -Power Icq state
2
ACPR = -51dBc, VCTRL = high, IS-95 Standard
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Preliminary - TQM7138
Data Sheet
CDMA Mode Electrical Characteristics1,2,3 (cont’d)
Noise Power in Rx band
Pout=28dBm, VCTRL = low, IS-95 Standard
-138
dBm/Hz
Input VSWR
Both ICQ-hi & ICQ-low
2:1
Second Harmonic
Pout=+28dBm, VCTRL = low, IS-95 Standard
-38
dBc
Third Harmonic
Pout=+28dBm, VCTRL = low, IS-95 Standard
-48
dBc
Recommended Supply Voltage
3.2
3.4
4.2
VDC
Reference Voltage
2.9
3.00
3.1
VDC
VREF Current, ICQ-hi
Hi-Power Mode, VCTRL = high
7
mA
VREF Current, ICQ-low
Low-Power Mode, VCTRL = low
4
mA
Leakage Current
VCTRL = low, VREF=0VDC
10
µA
Logic Current (VCTRL)
100
Logic Voltage (VCTRL)
High
1.7
2.0
Low
0
0.25
Recommended Operating Temperature
Ruggedness
-30
µA
VDC
0.5
VDC
+85C
No Damage, Pout=+28dBm, VCTRL = low, IS-95
10:1
Standard
Stability
No Oscillations, Pout=+28dBm, VCTRL = low, IS-
10:1
95 Standard
Note 1: Test Conditions: VCC1=3.4VDC, VCC2=3.4VDC, VREF=3.00VDC, VCTRL=0.0VDC, RF=836 MHz, TC = 25°C unless otherwise specified.
Note 2: Min./Max. limits are at +25°C case temperature unless otherwise specified.
Note 3: TriQuint Test Board.
AMPS Mode Electrical Characteristics1,2,3
Parameter
Conditions
RF Frequency
Min.
Typ/Nom
824
Pout, Saturated
Max.
Units
849
MHz
31.5
dBm
Large Signal Gain
Pout = 31.5 dBm
28
dB
Power Added Efficiency
Pout = 31.5 dBm
51
%
Receive Band Noise Power
BW=30KHz, f=Tx+45MHz
-137
dBm/Hz
Input VSWR
All Operating Pout and Vcc
2:1
2nd Harmonic
Pout = 31.5 dBm
-34
dBc
3rd
Pout = 31.5 dBm
-49
dBc
Pout = 31.5 dBm
812
mA
Harmonic
Icc
Note 1: Test Conditions: VCC1=3.4VDC, VCC2=3.4VDC, VREF=3.00, VCTRL=0.0VDC, RF=836MHz, TC = 25°C unless otherwise specified.
Note 2: Min./Max. limits are at +25°C case temperature unless otherwise specified.
Note 3: TriQuint Test Board.
For additional information and latest specifications, see our website: www.triquint.com
3
TQM7138 - Preliminary
Data Sheet
Application/Test Circuit:
C1
VREF
VREF
GND
C2
VCTRL
GND
VCTRL
RFout
TQM7138
GND
RFin
J1
RFOUT
RFIN
GND
VCC1
VCC2
C6
C3
C4
J2
VCC1
VCC2
C5
US Cellular Band, 824 – 849 MHz
Bill of Material for TQM7138 Power Amplifier Module Application/Test Circuit*
Component
Power Amplifier Module
RF Connector
Capacitor
Reference
Designator
Part
Number
TQM7138
J1, J2
C1, C2, C3, C6
Capacitor
C4, C5
*May vary due to printed circuit board layout and material
4
Value,
Cellular Band
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Size
8pin/6mm square
0.1µF
0402
10µF
1210
Preliminary - TQM7138
Data Sheet
impedance were 1 ohm, the resulting voltage ripple would be 0.9
Product Description:
volts which would cause the amplifier to fail it ACP requirements.
The TQM7138 is a two stage SiGe HBT power amplifier module in Generally, the power supply source impedance should be kept as
a cascade configuration intended for use in CDMA Cellular band
low as possible, preferably below 0.1 ohms total. Most battery
handsets.
technologies used in cellular telephones will support a low source
impedance, but it may be necessary to supplement this in some
Operation
designs with an low ESR capacitor. Ceramic or tantalum
The operation modes of the TQM7138 are determined based on
capacitors of approximately 10 micro-farads work well for this
the setting of VCNTRL and VREF. The truth table below defines the
requirement.
operating mode. Also, if the TQM7138 will be used in continuous
bias mode VCNTRL must be connected on the circuit board to
ground.
The application circuit includes 0.1 µF capacitors at each of the
PA control lines and VCC lines to ensure proper RF bypassing.
Depending on the phone board layout and circuit bypassing in
other areas of the phone, some of these components may not be
Operating
VCNTRL1
VREF
Mode
High Power
Low
>2.7VDC
Low-Power
High
>2.7VDC
Continuous
Low
~1.9 to
Bias
Off
3.0VDC
Low
0VDC
necessary. There are a number of VCO signals and IF signals
used in a given phone design, so it is important to protect the PA
module from interfering signals and to limit any interference
coming from the PA itself. Care should be taken when removing
any of the RF bypassing components.
One final area of concern is with excessive bypassing. If too large
a value of bypassing capacitor is used on any of the control lines,
it could reduce the frequency response of that control line to the
point where a specification failure could occur. Please be sure
that the logic lines and regulated supply lines driving the power
Application
amplifier control lines are adequate to supply peak current
The applications circuit for the TQM7138 is very simple since most requirements of the bypassing capacitors chosen on the control
of the critical components are included inside the module. There lines.
are several important considerations when using the module in a
phone design.
First of all, it is important that the source impedance of the VCC
power supply be very low. This is because the high current
demand during the modulation peaks of the CDMA waveform can
introduce voltage ripple at the symbol rate that will introduce
additional inter-modulation distortion or Adjacent Channel Power
distortion at the output of the power amplifier. If the power
amplifier has a quiescent current of 100 mA and a peak current
demand in excess of 1 amp, it is possible to see 900 mA change
in the current required from VCC as the modulated signal moves
from one extreme to the other. If the power supply source
One Bias State Operation
The TQM7138 can be operated using one bias state. If this mode
is selected, VCNTRL should be connected to ground.
Continuous Bias-State Operation
The TQM7138 can be operated in continuous bias mode in which
the VREF voltage is varied from ~1.9V to 3.0V to set the PAM
quiescent current as appropriate for the desired output power
level. In this mode, VCNTRL should be connected to ground on the
phone board. Specific application circuit information for this mode
is available upon request.
For additional information and latest specifications, see our website: www.triquint.com
5
TQM7138 - Preliminary
Data Sheet
Package Pinout:
1
GND
VREF
10
GND
2
VCTRL
9
Bias Control
RFOUT
3
Match
GND
4
Match
GND
7
RFIN
VCC1
5
VCC2
6
Pin Descriptions:
Pin Name
Pin #
Description and Usage (Equivalent Circuit)
GND
Paddle
Device Ground and Heat Sink. Needs good thermal path to remove heat.
VREF
1
Regulated supply for setting bias. Vref is set to 0VDC to power-off the TQM7138
VCTRL
2
CMOS compatible logic level to set bias level
RFIN
4
RF input. The RF circuit is DC ground. 50 Ohm RF
impedance.
RFin
VCC1
5
Collector supply for input stage.
VCC2
6
Collector supply for output stage.
RFOUT
8
RF output. The RF circuit is DC blocked internally. 50 ohm RF impedance.
GND
3, 7, 9,
Ground
10
TriQuint recommends use of several via holes to the backside ground under the Paddle.
6
8
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Preliminary -TQM7138
Data Sheet
Recommended PC board layout to Accept 10 Pin Module Package:
T
J
U
K
D
S
N
M
E
DIMENSION
D
E
J
K
M
N
S
T
U
MM
3.85
4.30
0.68
0.45
0.85
1.90
3.80
2.00
1.00
Notes:
1 Only ground signal traces are allowed directly under the package
2 Primary dimensions are in millimeters alternate dimensions are in inches.
For additional information and latest specifications, see our website: www.triquint.com
7
TQM7138 - Preliminary
Data Sheet
Package Type: 10 Pin Plastic Module Package
Pin 1
10
Pin 1
Indicator
2
9
3
8
4
7
5
6
Side View
Top View
5
6
4
7
3
8
2
9
1
10
Bottom View
8
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Preliminary - TQM7138
Data Sheet
Package Type: 10 Pin Plastic Module Package (cont’d)
DESIGNATION
DESCRIPTION
A
OVERALL HEIGHT
D
PACKAGE LENGTH
DIMENSION
1.06
+/-0.09 mm
4.0 +/-0.1 mm
E
PACKAGE WIDTH
J
SOLDER MASK OPENING LENGTH AND WIDTH
4.0 +/-0.1 mm
K
METAL PAD LENGTH AND WIDTH
0.40 +/-0.05 mm
P
DISTANCE BETWEEN METAL PAD AND PACKAGE
EDGE
0.10 +/-0.025 mm
0.575 +/-0.075 mm
T
GND SOLDER MASK OPENING WIDTH
2.00 +/-0.05 mm
S
GND SOLDER MASK OPENING LENGTH
3.80 +/-0.05 mm
R
DISTANCE BETWEEN GND SOLDER MASK OPENING
AND PACKAGE EDGE
0.10 +/-0.1 mm
Q
DISTANCE BETWEEN GND SOLDER MASK OPENING
AND PACKAGE EDGE
1.00 +/-0.1 mm
e
TERMINAL PITCH FOR TERMINAL 1-10, 2-9, 3-8, 4-7
AND 5-6
3.400 mm
e1
TERMINAL PITCH FOR TERMINAL 1-2-3-4-5 AND 6-78-9-10
0.850 mm
Notes:
1. GND SOLDER MASK OPENING IS NOT CENTERED ON THE PACKAGE
Additional Information
For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint:
Web: www.triquint.com
Tel: (503) 615-9000
Email: [email protected]
Fax: (503) 615-8902
For technical questions and additional information on specific applications:
Email: [email protected]
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of
this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party.
TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems.
Copyright © 2002 TriQuint Semiconductor, Inc. All rights reserved.
Revision 0.1, September 6, 2002
For additional information and latest specifications, see our website: www.triquint.com
9