UMS CHA2090

CHA2090
17-24GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2090 is a three-stage self-biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
§
§
§
§
§
Broadband performance 17-24GHz
2.0dB noise figure
23dB gain, ± 1dB gain flatness
Low DC power consumption, 55mA
Chip size : 2,170 x 1,270x 0.1mm
30
12
25
10
20
8
15
6
10
4
5
2
0
0
5
7
9 11 13 15 17 19 21 23 25 27 29 31 33 35
Frequency ( GHz )
On wafer typical measurements
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Parameter
Fop
Operating frequency range
NF
Noise figure
G
Gain
VSWRin
VSWRout
Min
Typ
17
2.0
19
Max
Unit
24
GHz
3.0
dB
23
dB
Input VSWR
2:1
Output VSWR
2:1
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20909347 – 13 Dec. 99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-24GHz Low Noise Amplifier
CHA2090
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Parameter
Fop
Operating frequency range
NF
Noise figure (1)
G
Gain (1)
Pout
Min
17
2
19
Pout -1dB gain compression
VSWRin
VSWRout
Vdd
Typ
Max
Unit
24
GHz
3
dB
23
dB
10
dBm
Input VSWR (1)
2.0:1
2.5:1
Output VSWR (1)
2.0:1
2.5:1
4.5
5.0
Positive Drain voltage (2)
V
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports. When the chip is attached with typical 0.15nH input and output bonding wires, the
indicated parameter values should be improved.
(2) See chip biasing option page 7/8.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage (3)
5.5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
(3) See chip biasing option page 7/8.
Ref. : DSCHA20909347 – 13 Dec. 99
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz Low Noise Amplifier
CHA2090
Typical Result
Chip Typical Response ( On wafer Sij ) :
Tamb = +25°C VD = 4.5V ID = 55mA
Frequency
GHz
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
16.000
MS11
mod
dB
-0.53
-0.06
-0.10
-0.16
-0.23
-0.34
-0.35
-0.45
-0.52
-0.75
-1.21
-2.33
-4.60
-8.86
-16.48
-24.70
PS11
pha
deg
-20.8
-39.0
-58.5
-77.4
-96.5
-115.2
-134.1
-154.1
-175.4
160.3
132.1
97.8
57.2
8.5
-40.4
-70.2
MS12
mod
dB
-89.62
-97.43
-87.21
-84.87
-83.35
-66.23
-72.40
-73.93
-72.23
-66.01
-60.26
-56.60
-53.53
-52.43
-52.50
-52.26
PS12
pha
deg
-92.0
26.6
-23.0
-135.7
120.1
84.2
-58.1
-13.6
-7.1
-34.2
-60.3
-94.9
-135.9
-173.4
157.8
135.4
MS21
mod
dB
-41.76
-48.17
-52.46
-61.22
-35.86
-12.12
1.34
7.48
11.96
15.54
18.30
19.92
21.36
22.49
23.60
23.89
PS21
pha
deg
-148.5
170.5
74.5
154.8
-69.1
-123.6
145.9
75.4
18.3
-28.2
-72.2
-116.5
-163.1
149.3
100.6
62.2
MS22
mod
dB
-0.72
-0.30
-0.33
-0.49
-0.89
-1.77
-3.35
-6.63
-9.34
-13.97
-22.57
-39.69
-30.19
-25.30
-21.56
-19.34
PS22
pha
deg
-23.8
-50.3
-75.6
-101.9
-129.8
-159.0
168.8
141.1
119.1
85.5
53.2
-60.4
-133.1
-127.8
-134.5
-144.1
17.000
18.000
19.000
20.000
21.000
22.000
23.000
24.000
-27.75
-23.51
-21.41
-18.63
-16.77
-14.95
-13.73
-12.59
-80.6
-87.4
-95.7
-107.0
-115.6
-123.2
-132.0
-138.8
-52.62
-51.36
-51.27
-54.07
-55.06
-57.35
-59.54
-60.85
108.9
100.6
60.6
52.8
30.3
23.7
8.0
32.3
24.01
23.66
23.52
23.46
23.11
23.14
22.82
22.36
28.4
-1.9
-30.5
-57.8
-84.4
-111.0
-137.3
-162.8
-17.60
-16.51
-16.34
-17.75
-19.33
-22.26
-25.44
-29.95
-158.0
-172.3
163.7
149.6
131.6
113.9
89.1
43.8
25.000
26.000
27.000
28.000
29.000
30.000
31.000
32.000
33.000
34.000
35.000
36.000
37.000
38.000
39.000
40.000
-11.60
-10.61
-9.34
-7.89
-6.63
-5.86
-4.83
-3.95
-3.18
-2.61
-2.15
-1.77
-1.65
-1.64
-1.65
-1.76
-144.7
-149.8
-154.5
-160.6
-171.3
179.9
172.0
161.7
151.2
140.2
129.3
117.9
106.7
95.9
85.9
75.2
-62.07
-54.29
-55.03
-52.05
-60.41
-56.56
-52.73
-54.11
-54.59
-55.15
-51.68
-57.64
-60.87
-53.10
-47.45
-46.80
49.5
40.2
23.9
-11.6
-22.1
23.2
-13.7
-40.7
-51.2
-37.9
-92.2
-111.2
-68.5
-33.4
-99.7
-137.0
22.01
21.46
20.91
20.49
20.06
19.50
19.03
18.31
17.51
16.54
15.35
13.94
12.41
10.67
8.76
6.70
171.8
147.9
125.0
102.3
78.5
55.4
31.5
6.9
-17.5
-42.3
-66.8
-91.0
-114.4
-137.5
-159.6
178.9
-28.26
-22.90
-19.22
-17.12
-16.20
-14.73
-13.72
-13.60
-13.61
-14.22
-14.94
-15.31
-13.87
-11.60
-9.18
-7.06
-24.5
-58.9
-84.3
-102.6
-114.2
-123.1
-137.5
-147.0
-155.8
-161.4
-161.8
-154.5
-143.9
-140.4
-143.5
-151.0
Ref. : DSCHA20909347 – 13 Dec. 99
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz Low Noise Amplifier
CHA2090
Typical on Wafer Measurements
Bias conditions: Vd = 4.5V, Id = 55mA
30
15
28
14
26
13
24
12
22
11
20
10
18
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
Frequency ( GHz )
30
25
25
20
20
15
10
15
5
0
10
-5
-10
5
-15
-20
0
Gain
dBS11
dBS22
-25
-5
-30
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
Frequency ( GHz )
Ref. : DSCHA20909347 – 13 Dec. 99
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz Low Noise Amplifier
CHA2090
Typical on Test Jig Measurements
Bias conditions: Vd = 4.5V, Id = 55mA
30
15
28
14
26
13
24
12
22
11
20
10
18
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
Frequency ( GHz )
30
25
25
20
20
15
10
15
5
0
10
-5
-10
5
-15
0
-20
Gain
dBS11
-25
dBS22
-5
-30
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
Frequency ( GHz )
Ref. : DSCHA20909347 – 13 Dec. 99
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz Low Noise Amplifier
CHA2090
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be preferred.
2170 ± 35
1200
1270 ± 35
2100
1295
Bonding pad positions.
( Chip thickness : 100µm. Pad size : 100x80µm² )
( All dimensions are in micrometers )
Ref. : DSCHA20909347 – 13 Dec. 99
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz Low Noise Amplifier
CHA2090
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. the
internal DC electrical schematic is given in order to use these pads in a safe way.
The two requirements are :
N°1 : Not exceed Vds = 3.5Volt
( internal Drain to Source voltage ).
N°2 : Not biased in such a way that Vgs becomes positive.
( internal Gate to Source voltage )
We propose two standard biasing :
Low Noise and low consumption :
Vd = 4.5V and B, D, E grounded.
All the other pads non connected ( NC ).
Idd = 55mA & Pout-1dB = 10dBm Typical.
( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ).
Low Noise and higher output power
Vd = 4.5V and B, C, F grounded.
All the other pads non connected ( NC ).
Idd = 75mA & Pout-1dB = 12dBm Typical..
Ref. : DSCHA20909347 – 13 Dec. 99
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz Low Noise Amplifier
CHA2090
Ordering Information
Chip form :
CHA2090-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA20909347 – 13 Dec. 99
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice