UMS CHA5293A

CHA5293a
17-24GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
Vd1 Vd2
Vg3 Vd3
The CHA5293a is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vg1,2 Vd2
Vg3 Vd3
25
Gain & RLoss (dB)
20
Main Features
■ Performances : 17-24GHz
■ 30dBm output power @ 1dB comp. gain
■ 17 dB ± 1dB gain
■ DC power consumption, 800mA @ 6V
■ Chip size : 4.01 x 2.52 x 0.05 mm
15
10
5
0
-5
S22
-10
-15
S11
-20
12
14
16
18
20
22
24
26
Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
17
24
GHz
G
Small signal gain
16
17
dB
P1dB
Output power at 1dB gain compression
29
30
dBm
Id
Bias current
800
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52932123 -03-May-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
28
17-24GHz High Power Amplifier
CHA5293a
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #800mA
Symbol
Fop
G
∆G
Is
P1dB
Parameter
Min
Operating frequency range (1)
17
Small signal gain (1)
16
Typ
Max
Unit
24
GHz
17
dB
Small signal gain flatness (1)
±1
dB
Reverse isolation
50
dB
30
dBm
32
dBm
Pulsed output power at 1dB compression (1)
29
P03
Output power at 3dB gain compression (1)
IP3
3 order intercept point (2)
42
dBm
PAE
Power added efficiency at 1dB comp.
20
%
rd
VSWRin
Input VSWR (2)
3:1
VSWRout Output VSWR (2)
3:1
Tj
Junction temperature for 80°C backside
155
Id
Bias current @ small signal
800
°C
1000
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage with Pin max=12dBm
6.25
V
Id
Maximum drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Ig
Gate bias current
-5 to +5
mA
Vgd
Minimum negative gate drain voltage ( Vg - Vd)
-8
V
Pin
Maximum input power overdrive (2)
15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +80
°C
Storage temperature range
-55 to +125
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52932123 -03-May-02
2/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz High Power Amplifier
CHA5293a
Typical on Jig Measurements
( including 1dB loss for the gain & 0.5dBm for the power)
Bias conditions: Vd=6V, Vg tuned for Id = 800mA
25
20
Gain & RLoss (dB)
15
10
5
0
-5
S22
-10
S11
-15
-20
12
14
16
18
20
22
24
26
28
Frequency (GHz)
Gain (dB)
Linear Gain & Return Losses versus frequency
20
1800
19
1700
18
1600
17
1500
16
1400
15
1300
14
16 GHz
18 GHz
20 GHz
22 GHz
24GHz
Série2
1200
13
1100
12
1000
Drain current (mA) @ 20GHz
11
900
10
800
14
16
18
20
22
24
26
28
30
32
Output Power (dBm)
Output power versus frequency & Drain current @ 20GHz
Ref. : DSCHA52932123 -03-May-02
3/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz High Power Amplifier
CHA5293a
74
F=18GHz
F=10MHz
70
66
62
58
54
50
46
42
38
C/ I3 (dBc)
34
IP3 (dBm)
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/I3 & IP3 versus total output power @ 18GHz
78
F=20GHz
F=10MHz
74
70
66
62
58
54
50
46
42
38
IP3 (dBm)
C/ I3 (dBc)
34
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/I3 & IP3 versus total output power @ 20GHz
Ref. : DSCHA52932123 -03-May-02
4/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz High Power Amplifier
CHA5293a
78
F=21.5GHz
F=10MHz
74
70
66
62
58
54
50
46
42
38
C/ I3 (dBc)
34
IP3 (dBm)
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/I3 & IP3 versus total output power @ 21.5GHz
74
F=23.5GHz
F=10MHz
70
66
62
58
54
50
46
42
38
C/ I3 (dBc)
34
IP3 (dBm)
30
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power(dBm)
C/I3 & IP3 versus total output power @ 23.5GHz
Ref. : DSCHA52932123 -03-May-02
5/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz High Power Amplifier
CHA5293a
Chip Assembly and Mechanical Data
To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed
To Vg1,2,3 DC Gate supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 50µm. All dimensions are in micrometers )
Ref. : DSCHA52932123 -03-May-02
6/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-24GHz High Power Amplifier
CHA5293a
Application note
Bias operation sequence:
ON: Supply Gate voltage
Supply Drain voltage
OFF: Cut off Drain voltage
Cut off Gate voltage
Due to 50µm thickness, specific care is requested for the handling and assembly.
Ordering Information
Chip form
:
CHA5293a-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA52932123 -03-May-02
7/7
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice