CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2 Vg3 Vd3 The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1,2 Vd2 Vg3 Vd3 25 Gain & RLoss (dB) 20 Main Features ■ Performances : 17-24GHz ■ 30dBm output power @ 1dB comp. gain ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.05 mm 15 10 5 0 -5 S22 -10 -15 S11 -20 12 14 16 18 20 22 24 26 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 17 24 GHz G Small signal gain 16 17 dB P1dB Output power at 1dB gain compression 29 30 dBm Id Bias current 800 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52932123 -03-May-02 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 28 17-24GHz High Power Amplifier CHA5293a Electrical Characteristics Tamb = +25°C, Vd = 6V Id #800mA Symbol Fop G ∆G Is P1dB Parameter Min Operating frequency range (1) 17 Small signal gain (1) 16 Typ Max Unit 24 GHz 17 dB Small signal gain flatness (1) ±1 dB Reverse isolation 50 dB 30 dBm 32 dBm Pulsed output power at 1dB compression (1) 29 P03 Output power at 3dB gain compression (1) IP3 3 order intercept point (2) 42 dBm PAE Power added efficiency at 1dB comp. 20 % rd VSWRin Input VSWR (2) 3:1 VSWRout Output VSWR (2) 3:1 Tj Junction temperature for 80°C backside 155 Id Bias current @ small signal 800 °C 1000 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage with Pin max=12dBm 6.25 V Id Maximum drain bias current 1450 mA Vg Gate bias voltage -2.5 to +0.4 V Ig Gate bias current -5 to +5 mA Vgd Minimum negative gate drain voltage ( Vg - Vd) -8 V Pin Maximum input power overdrive (2) 15 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52932123 -03-May-02 2/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz High Power Amplifier CHA5293a Typical on Jig Measurements ( including 1dB loss for the gain & 0.5dBm for the power) Bias conditions: Vd=6V, Vg tuned for Id = 800mA 25 20 Gain & RLoss (dB) 15 10 5 0 -5 S22 -10 S11 -15 -20 12 14 16 18 20 22 24 26 28 Frequency (GHz) Gain (dB) Linear Gain & Return Losses versus frequency 20 1800 19 1700 18 1600 17 1500 16 1400 15 1300 14 16 GHz 18 GHz 20 GHz 22 GHz 24GHz Série2 1200 13 1100 12 1000 Drain current (mA) @ 20GHz 11 900 10 800 14 16 18 20 22 24 26 28 30 32 Output Power (dBm) Output power versus frequency & Drain current @ 20GHz Ref. : DSCHA52932123 -03-May-02 3/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz High Power Amplifier CHA5293a 74 F=18GHz F=10MHz 70 66 62 58 54 50 46 42 38 C/ I3 (dBc) 34 IP3 (dBm) 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) C/I3 & IP3 versus total output power @ 18GHz 78 F=20GHz F=10MHz 74 70 66 62 58 54 50 46 42 38 IP3 (dBm) C/ I3 (dBc) 34 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) C/I3 & IP3 versus total output power @ 20GHz Ref. : DSCHA52932123 -03-May-02 4/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz High Power Amplifier CHA5293a 78 F=21.5GHz F=10MHz 74 70 66 62 58 54 50 46 42 38 C/ I3 (dBc) 34 IP3 (dBm) 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) C/I3 & IP3 versus total output power @ 21.5GHz 74 F=23.5GHz F=10MHz 70 66 62 58 54 50 46 42 38 C/ I3 (dBc) 34 IP3 (dBm) 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) C/I3 & IP3 versus total output power @ 23.5GHz Ref. : DSCHA52932123 -03-May-02 5/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz High Power Amplifier CHA5293a Chip Assembly and Mechanical Data To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed To Vg1,2,3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52932123 -03-May-02 6/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz High Power Amplifier CHA5293a Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 50µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5293a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52932123 -03-May-02 7/7 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice