CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBcp High PAE: > 40% @ 4dBcp 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A Chip size: 4.41 x 3.31 x 0.07mm Vg1 Vd1 IN OUT Vg1 Vd1 Vg2 Vd2 50 Pout (dBm) & PAE (%) & Gain (dB) The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • The backside of the chip is both RF and DC grounded • Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process. 45 PAE @ 4dBc 40 Pout @ 4dBc 35 30 25 20 Linear Gain 15 Pulse : 25µs 10% 10 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10% Symbol Top Fop P_4dBcp G Parameter Min Operating temperature range Operating frequency range Typ -40 8.5 Max Unit +80 11.5 °C GHz Output power @ 4dBcp @ 25°C 8 W Small signal gain @ 25°C 20 dB ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA7114-0197 - 16 Jul 10 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09 X-band High Power Amplifier CHA7114 Electrical Characteristics Tamb = 25°C, Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25µs, Duty cycle=10% Symbol Parameter Min Typ Max Unit Fop Operating frequency 8.5 11.5 GHz G Small signal gain 17.5 20 23 dB G_T Small signal gain variation versus -0.033 dB/°C temperature RLin Input Return Loss 8 10 dB RLout Output Return Loss 6 8 dB Psat Saturated output power 39.8 dBm Psat_T Saturated output power variation -0.008 dB/°C versus temperature P_4dBcp Output power @ 4dBcp (2) 38 39 dBm PAE_4dBcp Power Added Efficiency @ 4dBcp 36 42 % Id Supply drain current 2.3 2.6 A Vd1, Vd2 Drain supply voltage (2) 8.0 8.5 V Id_q Supply quiescent drain current (1) 2.0 A Vg1, Vg2 Gate Power supply voltage -4.0 V Top Operating temperature range -40 +80 °C (1) Parameter to be adjusted by tuning of Vg (2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on robustness see Maximum ratings) Absolute Maximum Ratings (1) Tamb = 25°C Symbol Cmp Vd Id Id_sat Vg Tj Tstg Parameter Compression level (2) Drain Power supply voltage (3) Drain Power supply quiescent current Drain Power supply current in saturation Gate Power supply voltage Maximum junction temperature (4) Storage temperature range Values 6 10 2.5 3 -8 175 -55 to +125 Unit dB V A A V °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5V/dBcp (3) Without RF input power (4) Equivalent Thermal Resistance to Backside: 5.6°C/W for backside temp. of 80°C. [ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power) Where ETRB stands for Equivalent Thermal Resistance to Backside. ] Ref. : DSCHA7114-0197 - 16 Jul 10 2/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice X band High Power Amplifier CHA7114 Typical measured characteristics Measurements on Jig: Vd = 8V, Vg = -4.0V, Id (Quiescent) = 2.2A, Pulse width = 25µs, Duty cycle = 10% 30 28 Linear gain (dB) 26 24 22 20 18 16 -40°C 14 80°C 12 20°C 10 8 8,5 9 9,5 10 10,5 11 11,5 12 11,5 12 Frequency (GHz) Linear gain versus frequency and temperature 42 41 40 Pout (dBm) 39 38 37 36 35 -40°C 34 80°C 33 20°C 32 8 8,5 9 9,5 10 10,5 11 Frequency (GHz) Output Power @ 4dBcp versus frequency and temperature Ref : DSCHA7114-0197 - 16 Jul 10 3/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7114 50 48 46 PAE (%) 44 42 40 38 36 -40°C 34 80°C 32 20°C 30 8 8,5 9 9,5 10 10,5 11 11,5 12 11,5 12 Frequency (GHz) PAE @ 4dBcp versus frequency and temperature 4 3,5 3 Id (A) 2,5 2 -40°C 1,5 80°C 20°C 1 0,5 0 8 8,5 9 9,5 10 10,5 11 Frequency (GHz) Id @ 4dBcp versus frequency and temperature Ref. : DSCHA7114-0197 - 16 Jul 10 4/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice X band High Power Amplifier CHA7114 41 39 Pout (dBm) 37 8GHz 8.4GHz 8.8GHz 9.2GHz 9.6GHz 10GHz 10.4GHz 10.8GHz 11.2GHz 11.6GHz 12GHz 35 33 31 29 27 25 -1 0 1 2 3 4 5 6 7 8 9 Compression (dB) Output Power @ 25°C versus compression and frequenc y 60 50 PAE (%) 40 8GHz 8.4GHz 8.8GHz 9.2GHz 9.6GHz 10GHz 10.4GHz 10.8GHz 11.2GHz 11.6GHz 12GHz 30 20 10 0 -1 0 1 2 3 4 5 6 7 8 Compression (dB) PAE @ 25°C versus compression and frequency Ref : DSCHA7114-0197 - 16 Jul 10 5/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 9 X-band High Power Amplifier CHA7114 16 15 14 13 12 11 1 10 2 9 3 4 5 6 7 8 Chip Mechanical Data and Pin references Chip width and length are given with a tolerance of +/- 35µm Chip thickness = 70µm +/- 10µm HF pads (1, 10) = 118µm x 196µm DC pads (3, 4, 5, 6, 7, 12, 13, 14, 15, 16) = 96µm x 96µm DC pads (8, 11) = 186µm x 96 µm Pin number 2, 9 3, 7, 12, 16 1 4, 6, 13, 15 G1, G2 IN Vg1R, Vg2R 5, 8, 11, 14 10 Vd1, Vd2 OUT Ref. : DSCHA7114-0197 - 16 Jul 10 Pin name Description Not Connected Not Connected Input RF port Vg: Negative supply voltage (through divided bridge Network) Vd: Positive supply voltage Output RF port 6/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice X band High Power Amplifier CHA7114 Bonding recommendations Port Connection External capacitor Vd1, Vd2 Inductance (Lbonding) = 0.3nH 2 gold wires bondings (550 µm max) Inductance (Lbonding) = 0.3nH 2 gold wires bondings (550µm max) Inductance ≤ 1nH Vg1R, Vg2R Inductance ≤ 1nH IN OUT C1 ~ 100pF C1 ~ 100pF C2 ~ 10nF Assembly recommendations (drain voltage pulsed mode operation) Vg Vd IN OUT Vg Vd C1=100pF C2=10nF Vg: gate supply voltage Vd: drain supply voltage Ref : DSCHA7114-0197 - 16 Jul 10 7/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7114 Ordering Information Chip form : CHA7114-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHA7114-0197 - 16 Jul 10 8/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice