CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave IC Vd1 Vd2 Description Vg3 Vd3 The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1 Vg2 Vd2 Vg3 Vd3 32 30 28 Main Features 26 24 ■ Performances : 24.5-26.5GHz ■ 30dBm output power @ 1dB comp. ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.05 mm 22 20 18 16 14 12 P-1dB (dBm) Linear Gain (dB) PAE (%) 10 24 24,5 25 25,5 26 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 24.5 26.5 GHz G Small signal gain 16 17 dB P1dB Output power at 1dB gain compression 29 30 dBm Id Bias current 800 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA529522297 -24-Oct.-02 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 26,5 24.5-26.5GHz High Power Amplifier CHA5295 Electrical Characteristics Tamb = +25°C, Vd = 6V Id #800mA Symbol Fop Parameter Min Operating frequency range (1) G 24.5 Small signal gain (1) ∆G Is P1dB Typ 16 Max Unit 26.5 GHz 17 dB Small signal gain flatness (1) ±1 dB Reverse isolation 50 dB 30 dBm 31 dBm Pulsed output power at 1dB compression (1) 29 P03 Output power at 3dB gain compression (1) IP3 3 order intercept point (2) (3) 41 dBm PAE Power added efficiency at 1dB comp. 18 % rd VSWRin Input VSWR 3.5:1 VSWRout Output VSWR 2:1 Tj Junction temperature for 80°C backside 155 Id Bias current @ small signal 800 °C 1000 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. (3) Linearity could be improved with a biasing point around 600mA ( see curves on next pages) Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage with Pin max=12dBm +6.25 V Id Maximum drain bias current 1400 mA Vg Gate bias voltage -2.5 to +0.4 V Ig Gate bias current -5 to +5 mA Vdg Maximum drain to gate voltage (Vd - Vg) +8.0 V Pin Maximum input power overdrive (2) +15 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA529522297 -24-Oct.-02 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-26.5GHz High Power Amplifier CHA5295 Typical on Jig Measurements (including jig losses) Bias conditions: Vd=6V, Vg tuned for Id #800mA 20 15 Gain & RLoss (dB) 10 5 0 S11 -5 -10 S22 -15 -20 22 24 26 28 30 32 Frequency (GHz) Linear Gain & Return Losses versus frequency 32 30 28 26 24 22 20 18 16 14 12 P-1dB (dBm) Linear Gain (dB) PAE (%) 10 24 24,5 25 25,5 26 Frequency (GHz) Linear Gain, Output power & PAE @ 1dB compression Ref. : DSCHA529522297 -24-Oct.-02 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 26,5 24.5-26.5GHz High Power Amplifier CHA5295 20 1300 24,5GHz 25,5GHz 26,5GHz 1250 Current 18 1200 17 1150 16 1100 15 1050 14 1000 13 950 12 900 11 850 10 Drain current (mA) @ 25.5GHz Gain (dB) 19 800 14 16 18 20 22 24 26 28 30 32 Output power (dBm) Output power versus frequency & Drain current @ 25.5GHz 50 46 42 38 34 30 26 F=24.5GHz F=10MHz 22 18 C/I3 (dBc) IP3 (dBm) 14 10 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output Power(dBm) C/I3 & IP3 versus DCL output power @ 24.5GHz, 800mA Ref. : DSCHA529522297 -24-Oct.-02 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-26.5GHz High Power Amplifier CHA5295 50 46 42 38 34 30 F=26.5GHz F=10MHz 26 22 18 C/I3 (dBc) IP3 (dBm) 14 10 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output Power(dBm) C/I3 & IP3 versus DCL output power @ 26.5GHz, 800mA 50 48 600mA 46 C/I3 ( dB) 44 42 +25°C 40 38 -35°C 800mA 36 34 +75°C 32 30 12 14 16 18 20 22 24 SCL Output Power (dBm) C/I3 versus drain current & temperature @ 25.5GHz Ref. : DSCHA529522297 -24-Oct.-02 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-26.5GHz High Power Amplifier CHA5295 30 28 26 Gain (dB) 24 +25°C - 600mA -40°C - 600mA +85°C - 600mA +25°C - 800mA -40°C - 800mA +85°C - 800mA 22 20 18 16 14 12 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Output power (dBm) Output power versus temperature & Drain current @ 25.5GHz Ref. : DSCHA529522297 -24-Oct.-02 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-26.5GHz High Power Amplifier CHA5295 Chip Assembly and Mechanical Data To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed To Vg1,2,3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA529522297 -24-Oct.-02 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24.5-26.5GHz High Power Amplifier CHA5295 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 50µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5295-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA529522297 -24-Oct.-02 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice