DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features ■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Parameter Typ Unit Wu Gate Width 5 µm Fco Cut-off frequency 3 THz n BVak Ideality factor 1.2 Anode-cathode break-down voltage < -5 V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051067 -08-Mar-01 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Flip-Chip Dual Diode DBES105a Rp Equivalent Circuit Rs Cj0 Cpar Rs(Ω Ω) Cjo(fF) (0V) Cpar(fF) Fco(THz) 4.4 9.5 5.8 2.4 Fco = 1/(2π Rs [Cpar + Cjo]) Rp can be neglected Absolute Maximum Ratings (1) Tamb. = 25°C Symbol Parameter Typ. values Unit Vak Reverse anode-cathode voltage -5 V Iak Forward anode-cathode current 10 mA (1) Operation of this device above anyone of these parameters may cause permanent damage. Imax vs Tamb 12 10 I max( mA) 8 6 4 2 0 0 20 40 60 80 100 120 Tam b (°C) Ref. : DSDBES1051067 -08-Mar-01 2/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Flip-Chip Dual Diode DBES105a Typical DC Measurements -4.0 -3.0 -2.0 -1.0 Voltage UD [V] 1E-01 UI-Characteristic Current |ID| [A] 1E-02 1E-03 1E-04 Is = 3.5e-14 A 1E-05 1E-06 1E-07 1x5µm 1E-08 1E-09 1E-10 1E-11 0.00 0.25 0.50 0.75 1.00 Typical On-Wafer Measurements Bias Conditions Vak = 0V Ref. : DSDBES1051067 -08-Mar-01 3/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Flip-Chip Dual Diode DBES105a Mechanical data 30 30 100 diameter 20 26 204 460 530 204 26 160 230 Dimensions in µm Dimensions: 230 ± 35 x 530 ± 35 µm Thickness= 100µm ± 10 µm Ordering Information Chip form : DBES105a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSDBES1051067 -08-Mar-01 4/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice