PNP SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6520 ISSUE 1 MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Base Current IB -250 mA Continuous Collector Current IC -500 mA Power Dissipation at Tamb= 25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage MAX. UNIT CONDITIONS. -350 V IC=-100µA, IE=0 V(BR)CEO -350 V IC=-1mA, IB=0* V(BR)EBO -5 V IE=-10µA, IC=0 Collector Cut-Off Current ICBO -50 nA VCB=-250V, IE=0 Emitter Cut-Off Current IEBO -50 nA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.3 -0.35 -0.5 -1.0 V V V V IC=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage VBE(sat) -0.80 -0.85 -0.90 V V V IC=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* Base-Emitter Turn-On Voltage VBE(on) -2.0 V IC=-100mA, VCE=-10V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 20 30 30 20 15 IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* 200 200 40 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-4 IC=-10mA, VCE=-20V, f=20MHz