PNP SILICON PLANAR MEDIUM POWER TRANSISTOR MPSA56 ISSUE 2 FEB 94 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C Ptot 750 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -80 V IC=-100µ A, IE=0 V(BR)CEO -80 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -4 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -0.1 µA VCB=-80V, IE=0 Collector Cut-Off Current ICES -0.1 µA VCE=-60V Collector-Emitter Saturation Voltage VCE(sat) -0.25 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.2 V IC=-100mA, VCE=-1V* Static Forward Current hFE Transfer Ratio 50 50 Transition Frequency 100 fT TYP. MAX. IC=-10mA, VCE=1V* IC=-100mA, VCE=1V* MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-81 IC=-10mA, VCE=-2V f=100MHz