PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA77P ISSUE 1 JUNE 94 FEATURES * 60 Volt VCEO * Gain of 10k at IC=100mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb =25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -60 V IC=-100µ A, IE=0 V(BR)CEO -60 V IC=-100µ A, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -10 V IE=-10µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-50V, IE=0 Collector Cut-Off Current ICES -500 nA VCE=-50V Emitter Cut-Off Current IEBO -100 nA VEB=-10V, IC=0 Collector-Emitter On Voltage VCE(sat) -1.5 V IC=-100mA, IB=-0.1mA* Base-Emitter Saturation Voltage VBE(on) -2 V IC=-100mA, VCE=-5V* Static Forward Current hFE Transfer Ratio TYP. MAX. 10k 10k IC=-10mA, VCE=-5V* IC=-100mA, VCE=5V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-83