NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715 40 50 UNIT Collector-Emitter Voltage VCEO 30 40 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C V V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 2N6714 Collector-Base Breakdown Voltage V(BR)CBO 40 UNIT CONDITIONS. 50 V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 40 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=1mA, IC=0 Collector Cut-Off Current ICBO 0.1 0.1 µA µA VCB=40V, IE=0 VCB=50V, IE=0 Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 0.5 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.2 1.2 V IC=1A, VCE=1V* Static Forward Current Transfer Ratio hFE 55 60 50 Transition Frequency fT 50 Collector Base Capacitance CCB MIN. 2N6715 MAX. MIN. MAX. IC=10mA, VCE=1V* IC=100mA, VCE=1V* IC=1A, VCE=1V* 250 55 60 50 250 500 50 500 MHz IC=50mA, VCE=10V 30 pF VCE=10V, f=1MHz 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-5