SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAIL BBY31 – S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg VALUE UNIT 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage V BR 28.0 Reverse current IR TYP. MAX. UNIT CONDITIONS. V I R = 10µA nA µA V R = 28V V R = 28V, T amb = 85°C MAX. UNIT CONDITIONS. 2.8 pF pF pF V R = 1V, f=1MHz V R = 3V, f=1MHz V R = 25V, f=1MHz 10 1.0 TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Diode Capacitance Cd MIN. TYP. 17.5 11.5 1.8 Capacitance Ratio Cd / Cd Series Resistance rd 5.0 V R = 3V/25V, f=1MHz 1.2 Spice parameter data is available upon request for this device Ω f=470MHz at the value of V R at which C d=9pF