ZETEX BBY31

SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
BBY31
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
1
2
1
PARTMARKING DETAIL
BBY31 – S1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Power Dissipation at T amb=25°C
P tot
Operating and Storage Temperature Range
T j:T stg
VALUE
UNIT
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Reverse Breakdown
Voltage
V BR
28.0
Reverse current
IR
TYP.
MAX.
UNIT
CONDITIONS.
V
I R = 10µA
nA
µA
V R = 28V
V R = 28V, T amb = 85°C
MAX.
UNIT
CONDITIONS.
2.8
pF
pF
pF
V R = 1V, f=1MHz
V R = 3V, f=1MHz
V R = 25V, f=1MHz
10
1.0
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
Diode Capacitance
Cd
MIN.
TYP.
17.5
11.5
1.8
Capacitance Ratio
Cd / Cd
Series Resistance
rd
5.0
V R = 3V/25V, f=1MHz
1.2
Spice parameter data is available upon request for this device
Ω
f=470MHz at the value
of V R at which C d=9pF