SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage Collector-Emitter Voltage V CES -60 V V CEO -45 Emitter-Base Voltage V V EBO -5 V Peak Pulse Current(10ms) I CM -1000 mA Continuous Collector Current IC -800 mA Base Current IB -100 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C TBA BCW68 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V (BR)CEO -45 V (BR)CES -60 Emitter-Base Breakdown Voltage V (BR)EBO -5 Collector-Emitter Cut-off Current I CES Emitter-Base Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Base-Emitter Saturation Voltage V BE(sat) Static Forward Current Transfer BCW68F h FE 100 35 170 250 IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* BCW68G h FE 160 60 250 400 IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* BCW68H h FE 250 100 350 630 IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* Transition Frequency fT 100 Output Capacitance C obo Input Capacitance C ibo Noise Figure N Switching times: Turn-On Time Turn-Off Time t on t off V IC=-10 µ A V I EBO =-10 µ A -20 -10 nA µA V CES =-45V VCES =-45V, Tamb=150°C -20 nA V EBO =-4V -0.3 V V IC=-100mA, IB = -10mA IC= -500mA, IB =-50mA* -2 V IC=-500mA,IB=-50mA* -0.7 12 2 MHz I C =-20mA, V CE =-10V f = 100MHz 18 pF V CB =-10V, f =1MHz 80 pF V EB =-0.5V, f =1MHz 10 dB I C= -0.2mA, V CE =- 5V R G =1K Ω, f=1KH ∆ f=200Hz 100 400 ns ns I C=-150mA I B1=- I B2 =-15mA R L=150 Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. TBA I CEO=-10mA