SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE(sat) = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current IC -1 A IB -200 mA Power Dissipation at T amb =25°C P tot 2 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C Base Current ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNI CONDITIONS. T Collector-Base Breakdown Voltage V (BR)CBO -40 V I C =-100µA Collector-Emitter Breakdown Voltage V (BR)CEO -40 V I C =-10mA* -5 Emitter-Base Breakdown Voltage V (BR)EBO V I E =-100µA Collector Cut-Off Current I CBO -100 nA V CB =-30V Emitter Cut-Off Current I EBO -100 nA V EB =-4V Collector-Emitter Cut-Off Current I CES -100 nA V CES =-30V Collector-Emitter Saturation Voltage V CE(sat) -0.2 -0.35 -0.5 V V V IC =-100mA,IB =-1mA* I C =-500mA,IB =-20mA* I C =-1A, I B =-100mA* Base-Emitter Saturation Voltage V BE(sat) -1.1 V I C =-1A, I B =-50mA* Base-Emitter Turn-on Voltage V BE(on) -1.0 V Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo 300 300 250 160 30 800 150 10 1 C MHz I C =-50mA, V CE =-10V f=100MHz pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% Spice parameter data is available upon request for this device 2 I =-1A, V CE =-5V* I C =-1mA, I C =-100mA*, I C =-500mA*, V CE =-5V I C =-1A*, I C =-2A*, V CB =-10V, f=1MHz SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE(sat) = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current IC -1 A IB -200 mA Power Dissipation at T amb =25°C P tot 2 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C Base Current ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNI CONDITIONS. T Collector-Base Breakdown Voltage V (BR)CBO -40 V I C =-100µA Collector-Emitter Breakdown Voltage V (BR)CEO -40 V I C =-10mA* -5 Emitter-Base Breakdown Voltage V (BR)EBO V I E =-100µA Collector Cut-Off Current I CBO -100 nA V CB =-30V Emitter Cut-Off Current I EBO -100 nA V EB =-4V Collector-Emitter Cut-Off Current I CES -100 nA V CES =-30V Collector-Emitter Saturation Voltage V CE(sat) -0.2 -0.35 -0.5 V V V IC =-100mA,IB =-1mA* I C =-500mA,IB =-20mA* I C =-1A, I B =-100mA* Base-Emitter Saturation Voltage V BE(sat) -1.1 V I C =-1A, I B =-50mA* Base-Emitter Turn-on Voltage V BE(on) -1.0 V Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo 300 300 250 160 30 800 150 10 1 C MHz I C =-50mA, V CE =-10V f=100MHz pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% Spice parameter data is available upon request for this device 2 I =-1A, V CE =-5V* I C =-1mA, I C =-100mA*, I C =-500mA*, V CE =-5V I C =-1A*, I C =-2A*, V CB =-10V, f=1MHz