DIODES BCV49

SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
BCV49
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE –
BCV48
PARTMARKING DETAILS –
EG
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
V CEO
60
V
Emitter-Base Voltage
V EBO
10
V
Peak Pulse Current
I CM
800
mA
Continuous Collector Current
IC
500
mA
Power Dissipation at T amb =25°C
P tot
Operating and Storage Temperature
Range
T j:T stg
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
80
TYP.
MAX.
V
I C=100µA
Collector-Emitter
Breakdown Voltage
V (BR)CEO
60
V
I C=10mA*
Emitter-Base
Breakdown Voltage
V (BR)EBO
10
V
I E=10µA
Collector Cut-Off
Current
I CBO
100
10
nA
µA
V CB=60V
V CB=60V, T amb=150°C
Emitter Cut-Off Current I EBO
100
nA
V EB=4V
Collector-Emitter
Saturation Voltage
V CE(sat)
1
V
I C=100mA, I B=0.1mA*
Base-Emitter
Saturation Voltage
V BE(sat)
1.5
V
I C=100mA, I B=0.1mA*
Static Forward Current h FE
Transfer Ratio
2000
4000
10000
2000
I C=100µA, V CE=1V†
I C=10mA, V CE=5V*
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
Transition Frequency
fT
170
MHz
I C=50mA, V CE=5V
f = 20MHz
Output Capacitance
C obo
3.5
pF
V CB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical graphs see FMMT38A datasheet
† Periodic Sample Test Only.
Spice parameter data is available upon request for this device
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