SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSP33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP43 PARTMARKING DETAIL – BSP33 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO -90 V V CEO -80 Emitter-Base Voltage V V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current IC -1 A Power Dissipation at T amb =25°C P TOT Operating and Storage Temperature Range T j:T stg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -90 MAX. V I C=-100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO -80 V I C=-10mA Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-10 µ A Collector Cut-Off Current I CBO -100 -50 nA µA V CB=-60V V CB=-60V, T amb=125°C Collector-Emitter Saturation Voltage V CE(sat) -0.25 -0.5 V V I C =-150mA, I B=-15mA I C =-500mA, I B=-50mA Base-Emitter Saturation Voltage V BE(sat) -1.0 -1.2 V V I C=-150mA, I B=-15mA I C =-500mA, I B=-50mA Static Forward Current Transfer Ratio h FE 30 100 50 I C =-100 µ A, V CE =-5V I C =-100mA, V CE =-5V I C =-500mA, V CE =-5V 300 Output Capacitance C obo 20 pF V CB =-10V, f =1MHz Input Capacitance C ibo 120 pF V EB =-0.5V, f =1MHz Transition Frequency fT MHz I C=-50mA, V CE=-10V f =35MHz Turn-On Time T on 500 ns Turn-Off Time T off 650 ns V CC =-20V, I C =-100mA I B1 =-I B2 =-5mA 100 *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA