SOT223 PNP SILICON PLANAR MEDIUM POWER FZT589 HIGH PERFORMANCE TRANSISTOR ISSUE 2 - OCTOBER 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES - C FZT589 FZT489 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -50 MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IC=-1mΑ∗ Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-30V Collector Emitter Cut-Off Current ICES -100 nA VCES=-30V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.35 -0.65 V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -1.1 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 100 100 80 40 Transition Frequency fT 100 Output Capacitance Cobo IC=-1mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* 300 15 MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT549 datasheet 3 - 194