ZETEX FXTA92

PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FXTA92
ISSUE 1 – MARCH 94
FEATURES
* 300 Volt VCEO
APPLICATIONS
* Telephone dialler circuits
B
C
REFER TO MPSA92 FOR GRAPHS
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
680
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-300
V
IC=-100µ A, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-300
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µ A, IC=0
Collector Cut-Off
Current
ICBO
-0.25
µA
VCB=-200V, IE=0
Emitter Cut-Off Current IEBO
-0.1
µA
VEB=-3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-20mA, IB=-2mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-20mA, IB=-2mA
Static Forward Current hFE
Transfer Ratio
25
40
25
Transition
Frequency
fT
50
Output Capacitance
Cobo
TYP.
MAX.
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
6
3-65
MHz
IC=-10mA, VCE=-20V
f=20MHz
pF
VCB=-20V, f=1MHz