NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT458 ISSUE 1 SEPTEMBER 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX458 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V 300 mA Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). TYP. MAX. 1 W -55 to +200 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100µ A Collector-Emitter Breakdown Voltage VCEO(sus) 400 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 nA VCB=320V Collector Cut-Off Current ICES 100 nA VCE=320V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.5 V V IC=20mA, IB=2mA IC=50mA, IB=6mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=50mA, IB=5mA Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=50mA, VCE=10V Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V* 300 5 3-35 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz