PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT705 ISSUE 1 FEB 94 FEATURES * 120 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlingtons REFER TO ZTX705 FOR GRAPHS B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -4 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -140 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -120 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -10 V IE=-100µA, IC=0 Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-120V, IE=0 VCB=-120V, Tamb=100°C Collector Cut-Off Current ICES -10 µA VCES=-80V Emitter Cut-Off Current IEBO -0.1 µA VEB=-8V Collector-Emitter Saturation Voltage VCE(sat) -1.3 -2.5 V V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* Base-Emitter Saturation Voltage VBE(sat) -1.8 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.7 V IC=-1A, VCE=-5V* Static Forward hFE Current Transfer Ratio Transition Frequency TYP. 3k 3k 3k 2k 3-55 IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 30k 160 fT MAX. MHz IC=-100mA, VCE=-10V f=20MHz