NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR MPS5179 MPS5179 ISSUE 2 FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY * WIRELESS LANS * REMOTE METERING * TAGGING C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 2.5 V Continuous Collector Current IC 50 mA Power Dissipation Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C Note: Spice model available Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: 0161-627 5105 (Sales), 0161-627 4963 (General Enquiries) Facsimile: 0161-627 5467 Telex: 668038 Zetex GmbH Drosselweg 30 D-81827 München Telefon: (089) 430 90 29 Fax: (089) 439 37 64 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone: 26100 611 Fax: 242 0 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 S00406 February 1994 This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PAGE NO MPS5179 MPS5179 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 20 V IC= 1µ A, IE=0 V(BR)CEO 12 V IC= 3mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 2.5 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 0.02 1.0 µA µA VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=10mA, IB=1mA Static Forward hFE Current Transfer Ratio 25 250 Transition Frequency fT 900 2000 MHz IC=5mA, VCE=6V, f=100MHz Collector-Base Capacitance Ccb 1.0 pF IE=0, VCB=10V, f=1MHz Small Signal Current Gain hfe 25 300 Collector Base Time Constant rbCc 3.0 14 ps IE=2mA, VCE=6V, f=31.9MHz Noise Figure NF 5 dB IC=1.5mA, VCE=6V RS=50Ω , f=200MHz Common-Emitter Amplifier Power Gain Gpe dB IC=5mA, VCE=6V f=200MHz 15 IC=3mA, VCE=1V IC=2mA, VCE=6V, f=1KHz MPS5179 MPS5179 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 20 V IC= 1µ A, IE=0 V(BR)CEO 12 V IC= 3mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 2.5 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 0.02 1.0 µA µA VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=10mA, IB=1mA Static Forward hFE Current Transfer Ratio 25 250 Transition Frequency fT 900 2000 MHz IC=5mA, VCE=6V, f=100MHz Collector-Base Capacitance Ccb 1.0 pF IE=0, VCB=10V, f=1MHz Small Signal Current Gain hfe 25 300 Collector Base Time Constant rbCc 3.0 14 ps IE=2mA, VCE=6V, f=31.9MHz Noise Figure NF 5 dB IC=1.5mA, VCE=6V RS=50Ω , f=200MHz Common-Emitter Amplifier Power Gain Gpe dB IC=5mA, VCE=6V f=200MHz 15 IC=3mA, VCE=1V IC=2mA, VCE=6V, f=1KHz