ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM61N02FTA 7 8mm embossed 3000 units ZXM61N02FTC 13 8mm embossed 10000 units DEVICE MARKING • N02 PROVISIONAL ISSUE A - MAY 1999 57 ZXM61N02F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS ± 12 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b) (V GS=4.5V; T A=70°C)(b) ID 1.7 1.3 A Pulsed Drain Current (c) I DM 7.4 A Continuous Source Current (Body Diode) (b) IS 0.8 A Pulsed Source Current (Body Diode) I SM 7.4 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - MAY 1999 58 ZXM61N02F Max Power Dissipation (Watts) CHARACTERISTICS 10 ID - Drain Current (A) Refer Note (a) 1 DC 1s 100ms 10ms 1ms 100m 100us 10m 0.1 1 100 10 Refer Note (b) Refer Note (a) 0.6 0.4 0.2 0 0 20 40 80 60 100 120 T - Temperature (°C) Safe Operating Area Derating Curve 160 140 240 Thermal Resistance (°C/W) 180 Thermal Resistance (°C/W) 0.8 VDS - Drain-Source Voltage (V) Refer Note (b) 160 140 120 100 80 1.0 D=0.5 60 40 D=0.2 20 D=0.1 Single Pulse D=0.05 0 0.0001 0.001 0.01 0.1 1 Refer Note (a) 200 160 120 D=0.5 80 40 D=0.2 D=0.1 Single Pulse D=0.05 0 0.0001 0.001 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - MAY 1999 59 ZXM61N02F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 20 V I D=250µA, V GS=0V 1 µA V DS=20V, V GS=0V 100 nA V GS=± 12V, V DS=0V V I D =250µA, V DS= V GS Ω Ω V GS=4.5V, I D=0.93A V GS=2.7V, I D=0.47A S V DS=10V,I D=0.47A 0.7 0.18 0.24 1.3 DYNAMIC (3) Input Capacitance C iss 160 pF Output Capacitance C oss 50 pF Reverse Transfer Capacitance C rss 30 pF Turn-On Delay Time t d(on) 2.4 ns Rise Time tr 4.2 ns Turn-Off Delay Time t d(off) 7.8 ns Fall Time tf 4.2 ns Total Gate Charge Qg 3.4 nC Gate-Source Charge Q gs 0.41 nC Gate-Drain Charge Q gd 0.8 nC Diode Forward Voltage (1) V SD 0.95 V T J=25°C, I S=0.93A, V GS=0V Reverse Recovery Time (3) t rr 12.9 ns T J=25°C, I F=0.93A, di/dt= 100A/µs Reverse Recovery Charge (3) Q rr 5.2 nC V DS=15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =10V, I D=0.93A R G=6.2Ω, R D=11Ω (refer to test circuit) V DS=16V,V GS=4.5V, I D =0.93A (refer to test circuit) SOURCE-DRAIN DIODE NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - MAY 1999 60 ZXM61N02F TYPICAL CHARACTERISTICS 2V 1 100m 1.5V 0.1 ID - Drain Current (A) 10 1 6V 4V 3.5V 3V 2.5V 2V 1 1.5V 100m 0.1 Output Characteristics 2.5 3.5 4.5 1.6 RDS(on) 1.4 VGS=4.5V I D=0.93A 1.2 1.0 VGS=VDS ID=250µA 0.8 0.6 VGS(th) 0.4 -100 VGS - Gate-Source Voltage (V) ISD - Reverse Drain Current (A) RDS(on) - Drain Source On Resistance (Ω) VGS=2.7V VGS=4.5V 10 100 200 Normalised RDS(on) and VGS(th) v Temperature 10 1 0 TJ- Junction Temperature (°C) Transfer Characteristics 0.1 10 Output Characteristics 0.1 0.1 1 VDS - Drain-Source Voltage (V) T=150°C T=25°C 1 VGS 10 10m 10 VDS=10V 1.5 +150°C VDS - Drain-Source Voltage (V) 1 0.01 ID - Drain Current (A) 6V 4V 3V 2.5V 10 10m 100 VGS +25°C Normalised RDS(on) and VGS(th) ID - Drain Current (A) 100 100 100 10 1 100m T=150°C T=25°C 10m 1m 100µ 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID - Drain Current (A) VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - MAY 1999 61 ZXM61N02F TYPICAL CHARACTERISTICS VGS=0V f=1MHz Ciss Coss Crss 300 VGS - Gate Source Voltage (V) C - Capacitance (pF) 400 200 100 0 0.1 1 10 100 5 ID=0.93A VDS=16V 4 3 2 1 0 0 1 2 3 VDS - Drain-Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - MAY 1999 62 ZXM61N02F PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 NOM 0.075 NOM 0.037 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - MAY 1999 64