ASI223-12 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI 2223-12 is Designed for ØE D F G H FEATURES: I • Input Matching Network • • Omnigold™ Metalization System M R N MAXIMUM RATINGS 1.5 A IC 25 V VCC 33.0 W @ TC ≤ 70 C O O O -65 C to +200 C TJ O O TSTG -65 C to +200 C θ JC O MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 CHARACTERISTICS SYMBOL MAXIMUM D .286 / 7.26 .306 / 7.77 E .110 / 2.79 .130 / 3.30 F .306 / 7.77 .318 / 8.08 G .148 / 3.76 H .400 / 10.16 .119 / 3.02 J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 P .118 / 3.00 .131 / 3.33 .230 / 5.84 R 3.9 C/W P DIM I PDISS J K L ORDER CODE: ASI10532 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 15 mA 45 V BVCER IC = 15 mA 45 V BVEBO IE = 1.5 mA 3.5 V ICES VCE = 22 V hFE VCE = 5.0 V IC = 1.0 A PG ηC VCC = 22 V GHz POUT = 12 W 30 f = 2.2 – 2.3 7.5 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.5 mA 300 --dB % REV. A 1/1