ASI HF250-50

HF250-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE 0.500 4L FLG
The ASI HF250-50 is Designed for
FEATURES:
.112x45°
L
A
• PG = 14 dB min. at 220 W/30 MHz
• IMD3 = 150 dBc max. at 220 W (PEP)
• Omnigold™ Metalization System
E
FULL R
C
Ø.125 NOM.
C
B
B
E
H
E
D
G
F
MAXIMUM RATINGS
IC
I J
40 A
K
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
VCBO
110 V
VCEO
55 V
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
VEBO
4.0 V
E
.125 / 3.18
B
PDISS
O
140 W @ TC = 25 C
O
TJ
O
-65 C to +200 C
O
-65 C to +150 C
θ JC
0.40 OC/W
CHARACTERISTICS
SYMBOL
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
O
T STG
.125 / 3.18
F
L
ORDER CODE: ASI10615
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CEO
IC = 200 mA
55
V
BV CES
IC = 200 mA
110
V
BV EBO
IE = 20 mA
4.0
V
ICEO
VCE = 30 V
10
mA
ICES
VCE = 60 V
10
mA
hFE
VCE = 6.0 V
45
---
Cob
VCB = 50 V
360
pF
GP
IMD3
ηC
VCE = 50 V
-30
dB
dBc
%
IC = 10 A
15
f = 1.0 MHz
14.5
ICQ = 150 mA
POUT = 250 W(PEP)
37
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.