MBT3946DW Dual General Purpose Transistor NPN+PNP Silicon 2 3 1 6 5 1 * “G” Lead(Pb)-Free 4 5 6 2 4 3 SOT-363(SC-88) NPN+PNP Maximum Ratings Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base VOltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Symbol VCEO Value Unit Vdc 40 -40 VCBO VEBO Vdc 60 -40 Vdc 6.0 -5.0 mAdc IC 200 -200 Thermal Characteristics Characteristics Symbol Max Unit PD 150 mW R q JA 833 C/W TJ,Tstg -55 to +150 C Total Package Dissipation (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Device Marking MBT3946DW=46 WEITRON http://www.weitron.com.tw MBT3946DW Off C har acter istics Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) (NPN) (IC=-1.0mAdc.IB=0) (PNP) V(BR)CEO Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) (NPN) V(BR)CBO (IC=-10 µAdc, IE=0) (PNP) Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0) (NPN) (IE=-10 µAdc, IC=0) (PNP) V(BR)EBO Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) (NPN) (VCE=-30 Vdc, VEB =-3.0 Vdc) (PNP) Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) (VCE=-30Vdc, VEB=-3.0Vdc) -40 - 60 -40 - 6.0 -5.0 - - 50 40 IBL ICEX (NPN) (PNP) Vdc Vdc Vdc nAdc -50 nAdc - 50 - -50 1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommeded footprint. 2. Pulse Test:Pulse Width < =300 µS, Duty Cycle < =2.0%. Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics (2) DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (NPN) 40 - 70 - (IC= 10 mAdc, VCE= 1.0Vdc) 100 300 (IC= 50 mAdc, VCE= 1.0Vdc) 60 - 30 - 60 - 80 - 100 300 (IC= 100 mAdc, VCE= 1.0Vdc) (IC= -0.1 mAdc, VCE=-1.0Vdc) (PNP) (IC= -1.0 mAdc, VCE= -1.0 Vdc) HFE (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0mAdc) (NPN) (IC= 50 mAdc, IB= 5.0mAdc) (IC= -10 mAdc, IB= -1.0mAdc) (PNP) (IC=-50 mAdc, IB= -5.0mAdc) Base-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (NPN) (IC= 50 mAdc, IB= 5.0 mAdc) (IC= -10 mAdc, IB= -1.0 mAdc) (PNP) (IC= -50 mAdc, IB= -5.0 mAdc) WEITRON http://www.weitron.com.tw VCE(sat) VBE(sat) 60 - 30 - - 0.20 0.30 - -0.25 -0.40 0.65 - 0.85 0.95 -0.65 - -0.85 -0.95 - - Vdc Vdc MBT3946DW Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) (NPN) (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) (PNP) Output Capacitance (VCB= 5.0 Vdc, IE=0, f=1.0MHz) (VCB= -5.0 Vdc, IE=0, f=1.0MHz) (NPN) (PNP) Input Capacitance (VEB= 0.5 Vdc, IC=0, f=1.0MHz) (VEB= -0.5 Vdc, IC=0, f=1.0MHz) (NPN) (PNP) fT - - 4.0 4.5 - 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - 5.0 4.0 td - 35 35 ns tr - 35 35 ns ts - 200 225 ns tf - 50 75 Cobo Cibo Input Impedance (VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz) (NPN) (VCE= -10 Vdc, IC=-1.0 mAdc, f=1.0 kHz) (PNP) hie Voltage Feeback Radio (VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz) (NPN) (VCE= -10Vdc, IC=-1.0 mAdc, f=1.0 kHz) (PNP) hre Small-Signal Current Gain (NPN) (VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz) (VCE= -10Vdc, IC=-1.0 mAdc, , f=1.0 kHz) (PNP) hfe Output Admittance (VCE= 10Vdc, IC=1.0 mAdc, f=1.0kHz) (VCE= -10Vdc, IC=-1.0 mAdc, f=1.0kHz) hoe (NPN) (PNP) Noise Figure (VCE= 5.0Vdc, IC= 100 µAdc, , RS=1.0k ohms, f=1.0kHz) (NPN) (VCE= -5.0Vdc, IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz) (PNP) MHz 300 250 NF pF pF k ohms x 10-4 - µmhos dB Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= 3.0 Vdc, VBE= -0.5 Vdc) (NPN) (Ic= 10 mAdc, IB1= 1.0 mAdc) (Vcc= -3.0 Vdc, VBE= 0.5 Vdc) (PNP) (Ic= -10 mAdc, IB1= -1.0 mAdc) (Vcc= 3.0 Vdc,Ic= 10 mAdc) (NPN) (Ic= 10 mAdc, IB1=IB2= 1.0 mAdc) (Vcc= -3.0 Vdc,Ic= -10 mAdc) (PNP) (Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) WEITRON http://www.weitron.com.tw ns MBT3946DW (NPN) DUTY CYCLE=2% +3V 300 ns +10.9V 275 10<t1<500µs DUTY CYCLE=2% 10k -0.5V +3V t1 +10.9V 10k 0 <1ns 275 CS<4 pF CS<4 pF 1N916 -9.1V <1ns *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ=25 C TJ=125 C 5000 10 2000 Q CHARGE (pC) CAPACITANCE(pF) VCC=40V IC / IB=10 3000 7.0 5.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 100 1.0 70 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance WEITRON http://www.weitron.com.tw 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTOR CURRENT (mA) Figure 4. Charge Data 200 MBT3946DW (NPN) 500 500 IC / IB=10 300 tf RISE TIME (ns) 200 100 TIME (ns) 70 50 tr@VCC=3.0V 30 20 40V 100 70 50 30 20 15V 10 7 5 VCC =40V IC / IB=10 300 200 1.0 2.0 3.0 5.0 7.0 10 20 10 2.0V td@VOB=0V 30 50 70 100 7 5 200 1.0 2.0 IC COLLECTOR CURRENT IC / IB=20 200 200 VCC=40V IB1=IB2 200 100 70 IC / IB=20 IC / IB=10 30 50 70 100 300 IB1=IB2 50 30 500 , t s =ts-1/8tf IC / IB=10 20 Figure 6. Rise Time tf FALL TIME (ns) , Is STORAGE TIME (ns) 300 5.0 7.0 10 IC COLLECTOR CURRENT (mA) Figure 5.Turn-On Time 500 3.0 20 IC / IB=20 100 70 50 30 20 IC / IB=10 10 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 7 5 200 1.0 2.0 3.0 IC COLLECTOR CURRENT (mA) 5.0 7.0 10 20 30 50 70 100 200 IC COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE=5.0 Vdc. TA=25 C, Bandwidth=1.0Hz) 14 SOURCE RESISTANCE=200 IC=1.0 mA 10 f =1.0kHz 12 NF NOISE FIGURE (dB) NF NOISE FIGURE (dB) 12 SOURCE RESISTANCE=200 IC=0.5 mA 8 SOURCE RESISTANCE=1.0k IC=50µA 6 4 2 0 0.2 0.4 WEITRON http://www.weitron.com.tw 1.0 2.0 4.0 IC=0.5mA 10 IC=50 µA 8 IC=100 µA 6 4 2 SOURCE RESISTANCE=500½ IC=100µA 0.1 IC=1.0mA 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f FREQUENCY (kHz) RS SOURSE RESISTANCE (kOHMS) Figure 9. Figure 10. 40 100 MMBT3904W h PARAMETERS (VCE=10 Vdc,m f=1.0 kHz, TA=25 C) 300 hoe OUTPUT ADMITTANCE (µ mhos) 100 hfe CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 50 20 10 5 2 1 10 0.1 0.2 0.3 IC COLLECTOR CURRENT (mA) Figure 11. Current Gain hfe VOLTAGE FEEDBACK RADIO (X 10-4) hfe INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.2 0.2 0.3 0.5 1.0 2.0 1.0 2.0 3.0 5.0 10 Fiugure 12. Output Admittance 20 0.1 0.5 IC COLLECTOR CURRENT (mA) 3.0 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC COLLECTOR CURRENT (mA) IC COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Radio Figure 13. Input Impedance hfe DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ=+125 C VCE=1.0V +25 C 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC COLLECTOR CURRENT (mA) Figure 15. DC Current Gain WEITRON http://www.weitron.com.tw 10 20 30 50 70 100 200 MBT3946DW VCE COLLECTOR EMITTER VOLTAGE (VOLTS) (NPN) 1.0 TJ=25 C Ic=1.0mA 0.8 30mA 10mA 100mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB BASE CURRENT (mA) Figure 16. Collector Saturation Ragion 1.0 1.2 VBE(sat)@IC/IB=10 1.0 COEFFICIENT (mV/ C) V VOLTAGE (VOLTS) TJ=25 C 0.8 VBE(sat)@VCE=1.0V 0.6 0.4 VCE(sat)@IC/IB=10 +25 C to +125 C qVC FOR VCE(sat) 0 -55 C to +25 C -0.5 -55 C to +25 C -1.0 +25 C to +125 C qVB FOR VBE(sat) -1.5 0.2 0 0.5 1.0 2.0 5.0 10 20 50 IC COLLECTOR CURRENT (mA) Figure 17. "ON" Voltage WEITRON http://www.weitron.com.tw 100 200 -2.0 0 20 40 60 80 100 120 140 160 IC COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients 180 200 MBT3946DW (PNP) 3V +9.1V 3V <1ns 275 <1ns 275 10k +0.5V 10k 0 CS<4 pF 10.6V 300 ns 10<t1<500µs DUTY CYCLE=2% CS<4 pF 1N916 DUTY CYCLE=2% 10.9V t1 *Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20 . Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ=125 C 10 5000 7.0 3000 VCC=40V IC/IB=10 2000 5.0 Cobo Q CHARGE (pC) CAPACITANCE (pF) TJ=25 C Cibo 3.0 2.0 1000 700 500 300 200 QT Q 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 40 1.0 2.0 3.0 20 30 50 70 100 200 Figure 22. Charge Data Figure 21. Capacitance 500 500 300 IC/IB=10 300 200 tf FALL TIME (ns) 200 100 TIME (ns) 7.0 10 IC COLLECTOR CURRENT (mA) REVERSEM BIAS (VOLTS) 70 tr@VCC=3.0V 50 15V 30 20 40V 2.0V 10 7 5 5.0 A td@VOB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTOP CURRENT (mA) Figure 23. Turn-On Time WEITRON http://www.weitron.com.tw 200 IC/IB=20 VCC=40V IB1=IB2 100 70 50 30 20 IC/IB=10 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTYOR CURRENT (mA) Figure 24.Fall Time 200 MBT3946DW (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz) 12 SOURCE RESISTANCE=200½ IC=1.0 mA 4.0 SOURCE RESISTANCE=200½ IC=0.5 mA 3.0 SOURCE RESISTANCE=2.0 k IC=50 µA 2.0 10 SOURCE RESISTANCE=2.0 k IC=100 µA 1.0 0 0.1 0.2 0.4 1.0 2.0 8 IC=100µA 6 4 IC=50µA 2 4.0 10 20 40 0 100 0.1 0.2 f FREQUENCY (kHZ) 4.0 10 20 40 100 100 hoe OUTPUT ADMITTANCE (µ mhos) 200 100 70 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 70 50 30 20 10 7 5 1.0 0.1 0.2 IC COLLECTOR CURRENT (mA) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 IC COLLECTOR CURRENT(mA) Figure 28. Input Impedance Figure 27. Current Gain 10 hfe VOLTAGE FEEBACK RATIO (X 10x4) 20 hfe INPUT IMPEDANCE (k OHMS) 2.0 (VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C) 300 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 Figure 26. h PARAMETERS hfe DC CURRENT GAIN 0.4 Rg SOURCE RESISTANCE (k OHMS) Figure 25. 30 IC=0.5mA IC=1.0mA f=1.0 kHz NF NOISE FIGURE (dB) NF NOISE FIGURE (dB) 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC COLLECTOR CURRENT (MA) Figure 29. Input Impedance WEITRON http://www.weitron.com.tw 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC COLLECTOR CURRENT (mA) Figure 30. Votage Feeback Ratio 5.0 7.0 10 MBT3946DW (PNP) hFE DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ=+125 C VCE=10V +25 C 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC COLLECTOR CURRENT (mA) VCE COLLECTOR EMITTER VOLTAGE (VOLTS) Figurer 31. DC Current Gain 1.0 TJ=25 C 0.8 IC=1.0mA 30mA 10mA 100mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB BASE CURRENT (mA) 1.0 VBE(sat) @ IC/IB=10 V VOLTAGE (VOLTS) TJ=25 C 0.8 VBE(sat) @VCE=1.0V 0.6 0.4 VCE(sat) @ IC/IB=10 0.2 0 10 20 50 10 20 50 IC COLLECTOR CURRENT (mA) Figure 33. "ON" Voltages WEITRON http://www.weitron.com.tw 100 200 qv TEMPERATURE COEFFICIENTS (mVAC) Figure 32. Collector Saturation Region 1.0 0.5 +25 C TO +125 C qVC FOR VCE(sat) 0 -55 C TO +25 C -0.5 +25 C TO +125 C -1.0 -55 C TO +25 C -1.5 -2.0 qVB FOR VBE(sat) 0 20 40 60 80 100 120 140 160 IC COLLECTOR CURRENT (mA) Figure 34.Temperature Coefficients 180 200 MBT3946DW SOT-363 Package Outline Dimensions Unit:mm A 6 5 SOT-363 4 B C 1 2 D 3 E H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25