MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 3 1 1 P b Lead(Pb)-Free 2 BASE SC-89 (SOT-523F) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value 40 75 6.0 600 Symbol VCEO VCBO VEBO IC Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Symbol Max PD 150 Thermal Resistance, Junction to Ambient RθJA 833 C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Unit mW DEVICE MARKING MMBT2222AT=1P ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) V(BR)CEO 40 - V Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0) V(BR)CBO 75 - V Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) V(BR)EBO 6.0 - V OFF CHARACTERISTICS Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 V) IBL - 20 nA Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 V) ICEX - 100 nA WEITRON http://www.weitron.com.tw 1/6 28-Apr-2010 MMBT2222AT ON CHARACTERISTICS2 DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) HFE − 35 50 75 100 40 − − − − − − − 0.3 1.0 V 0.6 − 1.2 2.0 V fT 250 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre − 4.0 X 10− 4 Small −Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 − Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 4.0 dB (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) k SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. WEITRON http://www.weitron.com.tw 2/6 28-Apr-2010 MMBT2222AT SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100µs, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 to 100µs, DUTY CYCLE ~ ~ 2% + 16 V 200 1.0 k 1.0 k 0 0 – 2.0V C S *< 10 pF –14 V C S* < 10 pF < 20 ns <2.0 ns 1N914 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 h FE , DC CURRENT GAIN 700 T J = +125°C 500 300 200 +25°C 100 70 –55°C 50 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 700 1.0k I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 T J = 25°C 0.8 0.6 I C=1.0 mA 0.4 500mA 100mA 10 mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 4. Collector Saturation Region WEITRON http://www.weitron.com.tw 3/6 28-Apr-2010 MMBT2222AT 200 100 70 70 t r @V CC= 30V t d@V EB(off) = 2.0V t d@V EB(off) =0 30 20 10 7.0 5.0 t ’s= t s–1/8 t f 30 tf 20 10 7.0 3.0 2.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Turn - Off Time 500 10 R S = OPTIMUM I C = 1.0 mA, R S = 150 Ω 8 8 NF, NOISE FIGURE (dB) I C = 500 µA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ I C = 50 µA, R S = 4.0 kΩ 6 f = 1.0 kHz RS = SOURCE RS = RESISTANCE 4 2 0 0.01 0.02 0.2 0.5 1.0 2.0 5.0 10 20 50 6 4 2 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (kΩ) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 20 C eb 10 7.0 5.0 C cb 3.0 2.0 0.1 I C=50 µA 100 µA 500 µA 1.0 mA 0 0.05 0.1 f T ,CURRENT– GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) 20 I C , COLLECTOR CURRENT (mA) 10 CAPACITANCE (pF) V CC= 30V I C/ I B= 10 I B1 = I B2 TJ= 25°C 50 t , RISE TIME (ns) 50 t , TIME (ns) 100 I C /I B = 10 TJ= 25°C 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 500 V CE = 20 V T J = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 210 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 9. Capacitance Figure 10. Current– Gain Bandwidth Product WEITRON http://www.weitron.com.tw 4/6 28-Apr-2010 MMBT2222AT 10 +0.5 T J = 25°C 0 V BE(sat) @ I C /I B =10 COEFFICIENT (mV/ °C) V, VOLTAGE ( VOLTS ) 0.8 1.0 V 0.6 V BE(on) @ V CE =10 V 0.4 0.2 R θVC for V CE(sat) – 0.5 –1.0 –1.5 R θVB for V BE –2.0 V CE(sat) @ I C /I B =10 0 – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. “On” Voltages Figure 12. Temperature Coefficients WEITRON http://www.weitron.com.tw 5/6 500 28-Apr-2010 MMBT2222AT Unit:mm SC-89 Package Outline Dimensions A Dim A B C D G J K M N S 3 T OP V IE W 2 1 K B S G D N M C WEITRON http://www.weitron.com.tw J 6/6 SC-89 Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70 28-Apr-2010