FJY3014R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=47KΩ) • Complement to FJY4014R Eqivalent Circuit C C S14 E B E B SOT - 523F Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA TSTG Storage Temperature Range -55~150 °C TJ Junction Temperature 150 °C PC Collector Power Dissipation, by RθJA 200 mW Max Units 600 °C/W * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol RθJA Parameter Thermal Resistance, Junction to Ambient * Minimum land pad. Electrical Characteristics* Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 50 V V(BR)CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 50 V ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 5 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA fT Current Gain - Bandwidth Product VCE = 10V, IC = 5 mA Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz VI(off) Input Off Voltage VCE = 5 V, IC = 100uA VI(on) Input On Voltage VCE = 0.2V, IC = 5mA 1.3 V R1 Input Resistor 3.2 4.7 6.2 KΩ R1/R2 Resistor Ratio 0.09 0.1 0.11 0.1 uA 68 0.3 V 250 MHz 3.7 pF 0.5 V * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation FJY3014R Rev. A 1 www.fairchildsemi.com FJY3014R NPN Epitaxial Silicon Transistor November 2006 Figure 1. DC current Gain Figure 2. Input On Voltage 10 1000 VCE =0.3V R1 = 4.7K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = 5V R1 = 4.7K R2 = 47K 100 0.1 0.1 10 1 10 100 1 1000 1 IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 100 Figure 4. Power Derating 1000 280 IC = 10IB R1 = 4.7K R2 = 47K 240 PC[mW], POWER DISSIPATION VCE(sat)[mV], SATURATION VOLTAGE 10 IC[mA], COLLECTOR CURRENT 100 10 200 160 120 80 40 0 1 1 10 0 100 50 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE 2 FJY3014R Rev. A 25 o IC[mA], COLLECTOR CURRENT www.fairchildsemi.com FJY3014R NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJY3014R NPN Epitaxial Silicon Transistor Package Dimensions SOT-523F Dimensions in Millimeters 3 FJY3014R Rev. A www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22