H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description ■ High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. – Minimum 100V for H11G1M – Minimum 80V for H11G2M – Minimum 55V for H11G3M ■ High sensitivity to low input current (Min. 500% CTR at IF = 1mA) ■ Low leakage current at elevated temperature (Max. 100µA at 80°C) ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2 Applications ■ CMOS logic interface ■ Telephone ring detector ■ Low input TTL interface ■ Power supply isolation ■ Replace pulse transformer Schematic ANODE 1 CATHODE 2 N/C 3 ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 6 BASE 5 COLLECTOR 4 EMITTER www.fairchildsemi.com H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers May 2007 Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL 260 for 10 sec °C 260 mW Derate Above 25°C 3.5 mW/°C IF Forward Input Current 60 mA VR Reverse Input Voltage 6.0 V Forward Current – Peak (1µs pulse, 300pps) 3.0 A LED Power Dissipation @ TA = 25°C 100 mW 1.8 mW/°C H11G1M 100 V H11G2M 80 H11G3M 55 PD Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25°C EMITTER IF(pk) PD Derate Above 25°C DETECTOR VCEO PD Collector-Emitter Voltage LED Power Dissipation @ TA = 25°C Derate Above 25°C ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 200 mW 2.67 mW/°C www.fairchildsemi.com 2 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit All 1.3 1.50 All -1.8 mV/°C 25 V 50 pF EMITTER VF Forward Voltage ∆VF ∆TA Forward Voltage Temp. Coefficient IF = 10mA BVR Reverse Breakdown Voltage IR = 10µA All CJ Junction Capacitance VF = 0V, f = 1MHz All 3.0 VF = 1V, f = 1MHz IR Reverse Leakage Current V 65 VR = 3.0V All 0.001 10 µA DETECTOR BVCEO BVCBO BVEBO ICEO Breakdown Voltage Collector to Emitter Collector to Base IC = 1.0mA, IF = 0 IC = 100µA H11G1M 100 H11G2M 80 H11G3M 55 H11G1M 100 H11G2M 80 H11G3M 55 All 7 Emitter to Base Leakage Current Collector to Emitter VCE = 80V, IF = 0 H11G1M VCE = 60V, IF = 0 H11G2M VCE = 30V, IF = 0 H11G3M VCE = 80V, IF = 0, TA = 80°C H11G1M VCE = 60V, IF = 0, TA = 80°C H11G2M V V 10 V 100 nA 100 µA Transfer Characteristics Symbol Characteristics Test Conditions Device Min. Typ.* IF = 10mA, VCE = 1V H11G1M/2M 100 (1000) IF = 1mA, VCE = 5V H11G1M/2M 5 (500) H11G3M 2 (200) Max. Units EMITTER CTR VCE(SAT) Current Transfer Ratio, Collector to Emitter Saturation Voltage mA (%) IF = 16mA, IC = 50mA H11G1M/2M 0.85 1.0 IF = 1mA, IC = 1mA H11G1M/2M 0.75 1.0 H11G3M 0.85 1.2 IF = 20mA, IC = 50mA V SWITCHING TIMES tON Turn-on Time tOFF Turn-off Time RL = 100Ω, IF = 10mA, VCE = 5V, f ≤ 30Hz, Pulse Width ≤ 300µs All 5 µs All 100 µs Isolation Characteristics Symbol Device Min. VISO Isolation Voltage Characteristic f = 60Hz, t = 1 sec. Test Conditions All 7500 RISO Isolation Resistance VI-O = 500 VDC All 1011 CISO Isolation Capacitance f = 1MHz All Typ.* Max. Units VACPEAK Ω 0.2 pF *All Typical values at TA = 25°C ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 www.fairchildsemi.com 3 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) 100 IC - NORMALIZED OUTPUT CURRENT IC - NORMALIZED OUTPUT CURRENT 10 1 Normalized to: VCE = 5V IF = 1mA 0.1 0.01 0.001 0.1 1 IF = 50mA 10 IF = 5mA IF = 1mA 1 IF = 0.5mA 0.1 0.01 -60 10 -40 0 20 40 60 80 100 120 Fig. 2 Normalized Output Current vs. Temperature Fig. 1 Output Current vs. Input Current 1000 100 Normalized to: VCE = 5 V IF = 1 mA TA = 25˚C IF = 50mA ICEO - DARK CURRENT (nA) IC - NORMALIZED OUTPUT CURRENT -20 TA - AMBIENT TEMPERATURE (˚C) IF - LED INPUT CURRENT(mA) 10 Normalized to: VCE = 5V IF = 1mA TA = 25˚C IF = 10mA IF = 2mA IF = 1mA 1 IF = 0.5mA 0.1 VCE = 80V 100 VCE = 30V 10 VCE = 10V 1 0.1 0.01 0.01 1 0 10 10 20 30 40 50 60 70 80 90 100 TA - AMBIENT TEMPERATURE (˚C) VCE - COLLECTOR - EMITTER VOLTAGE (V) Fig. 3 Output Current vs. Collector - Emitter Voltage Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature IF - FORWARD CURRENT (mA) 10 RL = 10Ω RL = 100Ω RL = 1kΩ 1 Normalized to: VCC = 5 V IF = 10 mA RL = 100 Ω 0.1 0.1 1 10 ton + toff - TOTAL SWITCHING SPEED (NORMALIZED) Fig. 5 Input Current vs. Total Switching Speed (Typical Values) ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 www.fairchildsemi.com 4 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Typical Performance Curves Through Hole Surface Mount 0.350 (8.89) 0.320 (8.13) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.320 (8.13) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.20) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 0.100 [2.54] 15° 0.4" Lead Spacing 0.035 (0.88) 0.006 (0.16) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) Recommended Pad Layout for Surface Mount Leadform 0.350 (8.89) 0.320 (8.13) 0.070 (1.78) 0.060 (1.52) 0.260 (6.60) 0.240 (6.10) 0.425 (10.79) 0.070 (1.77) 0.040 (1.02) 0.100 (2.54) 0.305 (7.75) 0.014 (0.36) 0.010 (0.25) 0.030 (0.76) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) 0.008 (0.21) 0.100 [2.54] 0.425 (10.80) 0.400 (10.16) Note: All dimensions are in inches (millimeters). ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 www.fairchildsemi.com 5 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option H11G1M S H11G1SM SR2 H11G1SR2M T H11G1TM 0.4" Lead Spacing V H11G1VM VDE 0884 TV H11G1TVM VDE 0884, 0.4" Lead Spacing SV H11G1SVM VDE 0884, Surface Mount SR2V H11G1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11G1 2 X YY Q 6 4 5 Definitions ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code www.fairchildsemi.com 6 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 0 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 www.fairchildsemi.com 7 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Carrier Tape Specifications ® ACEx Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 ©2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 www.fairchildsemi.com 8 H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.