PF5103 tm N-Channel Switch Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. TO-92 1 2 3 Marking : PF5103 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Symbol Parameter Value Units PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Minimum land pad. Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)GSS Gate-Source Breakdwon Voltage IG = -1.0µA, VDS = 0 IGSS Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125oC VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA VGS(f) Gate-Source Forward Voltage VDS = 0V, IG = 10mA -40 -1.2 V -200 -500 pA nA -2.7 V 1.0 V 40 mA On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 10 Small Signal Characteristics µmhos µmhos gfs Forward Transfer conductance VDG = 15V, ID = 500uA, f = 1.0KHz VDG = 15V, ID = 2.0mA, f = 1.0KHz goss Output Conductance VDG = 15V, ID = 500uA, f = 1.0KHz 25 µmhos Ciss Input Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 16 pF Crss Reverse Transfer Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 6 pF 3500 7500 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2006 Fairchild Semiconductor Corporation PF5103 Rev. A 1 www.fairchildsemi.com PF5103 N-Channel Switch October 2006 Common Drain-Source - TRANSCONDUCTANCE (mmhos) - 0.4 V 6 - 0.6 V 4 - 1.0 V 2 - 1.4 V - 1.2 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) g fs I D - 0.8 V 2 r DS 50 - DRAIN CURRENT (mA) 125°C 25°C - 55°C V DS = 15 V I DSS _5 0.5 1 _ _ _ 2 5 - GATE CUTOFF VOLTAGE (V) VGS(off) = - 1.6 V 5 10 V DS = 15 V - 55°C 25°C 125°C 12 8 VGS(off) = - 1.1 V 125°C 25°C - 55°C 4 I I 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 30 VGS(off) = - 3.0 V - 55°C 25°C 125°C 20 VGS(off) = - 2.0 V - 55°C 25°C 125°C 10 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) g fs V DS = 15 V 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Transfer Characteristics - TRANSCONDUCTANCE (mmhos) Transfer Characteristics g fs - TRANSCONDUCTANCE (mmhos) _ 10 D D - DRAIN CURRENT (mA) VGS(off) = - 2.0 V 0 -3 2 PF5103 Rev. A I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA Transfer Characteristics 25°C 125°C 10 20 fs 10 16 - 55°C 20 g V GS (OFF) VGS(off) = - 3.0 V 30 50 20 Transfer Characteristics 40 100 - DRAIN "ON" RESISTANCE (Ω) - 0.2 V 8 100 DS T A = 25°C TYP V GS(off) = - 2.0 V V GS = 0 V - DRAIN CURRENT (mA) Parameter Interactions r 10 30 V GS(off) = - 1.6 V - 55°C 25°C 125°C 20 VGS(off) = - 1.1 V 10 - 55°C 25°C 125°C V DS = 15 V 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) www.fairchildsemi.com PF5103 N-Channel Switch Typical Characteristics PF5103 N-Channel Switch 100 - OUTPUT CONDUCTANCE ( µ mhos) Transconductance vs Drain Current TA = 25°C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V 1 0.1 1 I D - DRAIN CURRENT (mA) 100 os V GS(off) = - 3.0V Output Conductance vs Drain Current 10 T A = 25°C 10 √ e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) C is (V DS = 20) C rs (V DS = 0) -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 0.1 I D - DRAIN CURRENT (mA) Pd, Power Dissipation,[mW] 10 f = 10 kHz f = 100 kHz 10 3 PF5103 Rev. A P D - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / √ Hz) f = 10 Hz f = 100 Hz f = 1.0 kHz D 10 V DG = 15V 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 10 f - FREQUENCY (kHz) 100 Power Dissipation vs Power Dissipation vs Ambient Temperature Ambient Temperature 800 V DG = 15V I 10V 15V 20V V GS(off) = - 0.85V 1 0.01 -20 100 0.1 1 - DRAIN CURRENT (mA) 20V V GS(off) = - 2.0V Noise Voltage vs Current 1 0.01 5.0V 10V 15V Noise Voltage vs Frequency C is (V DS = 0) 0 V GS(off) = - 5.0V 0.1 0.01 100 f = 0.1 - 1.0 MHz 1 5.0V 10V 15V 20V 1 Capacitance vs Voltage 100 10 V DG = 5.0V f = 1.0 kHz g g fs - TRANSCONDUCTANCE (mmhos) Typical Characteristics(continued) 700 600 600 TO-92 500 400 400 SOT-23 300 200 200 100 0 00 0 25 25 50 50 75 75 100 125 100 o Temperature, T C [( oC] TEMPERATURE C) 150 125 175 150 www.fairchildsemi.com PF5103 N-Channel Switch Typical Characteristics(continued) Switching Turn-Off Time vs Drain Current t d(OFF) ,t OFF - TURN-OFF TIME (ns) 25 V DD = 3.0V t r (ON) 20 t r APPROX. I D INDEPENDENT VGS(off) = 3.0V 15 T A = 25°C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 -2 -4 -6 -8 -10 V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) On Resistance vs Drain Current 100 125°C V GS(off) TYP = - 2.0V 50 25°C 20 125°C V GS(off) - 55°C TYP = - 7.0V 25°C r DS @ V GS = 0 - 55°C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 4 PF5103 Rev. A 100 r DS - NORMALIZED RESISTANCE ( Ω ) r DS - DRAIN "ON" RESISTANCE (Ω) t r(ON) ,t d(ON)- TURN-ON TIME (ns) Switching Turn-On Time vs Gate-Source Voltage T A = 25°C VGS(off)= -2.2V 80 V DD = 3.0V V GS = -12V - 4.0V t (off) 60 - 7.5V V GS(off) INDEPENDENT 40 20 0 t d(off) DEVICE t d(off) 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 Normalized Drain Resistance vs Bias Voltage 100 50 20 10 V GS(off) @ 5.0V, 10 µA r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) www.fairchildsemi.com PF5103 N-Channel Switch Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters 5 PF5103 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 6 PF5103 Rev. A www.fairchildsemi.com PF5103 N-Channel Switch TRADEMARKS