FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5 V RDS(ON) = 60 mΩ @ VGS = 2.5 V Applications • Low gate charge (7.6 nC typical) • Load switch • Battery protection • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current (Note 1a) 2.5 A PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 – Continuous – Pulsed TJ, TSTG 10 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 371 FDN371N 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDN371N Rev C (W) FDN371N September 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA VDS = VGS, ID = 250 µA 1.5 V On Characteristics 20 ID = 250 µA,Referenced to 25°C V 13 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance 0.5 ID(on) On–State Drain Current VGS = 4.5 V, ID = 2.5 A VGS = 2.5 V, ID = 2.3 A VGS = 4.5V, ID = 2.5 A, TJ = 125°C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 2.5 A 16 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 815 pF ID = 250 µA,Referenced to 25°C 1.0 –3 22 29 31 mV/°C 50 60 75 5 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 197 pF 106 pF (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 2.5 A, 7 14 ns 9 18 ns 17 31 ns 5.5 11 ns 7.6 10.7 nC 1.5 nC 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.6 0.42 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN371N Rev C (W) FDN371N Electrical Characteristics FDN371N Typical Characteristics 2.2 30 VGS = 4.5V 3.5V 2.5V 25 ID , DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 20 15 2.0V 10 5 0 2 VGS = 2.0V 1.8 1.6 1.4 2.5V 3.0V 1.2 1 2 3 4 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.07 ID = 2.5A VGS = 4.5V RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 0 1.4 1.2 1 0.8 0.6 0.06 0.05 o TA = 125 C 0.04 0.03 o TA = 25 C 0.02 0.01 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 V GS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 VDS = 5V o IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 3.5V 1 25 C 15 125oC 10 5 0 VGS = 0V 10 TA = 125 oC 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN371N Rev C (W) FDN371N Typical Characteristics 1200 ID = 2.5A VDS = 5V 10V f = 1 MHz VGS = 0 V 1000 4 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 5 15V 3 2 CISS 800 600 400 COSS 1 200 CRSS 0 0 0 2 4 6 8 10 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 20 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs 1ms 10ms 1 100ms 1s DC VGS = 4.5V SINGLE PULSE RθJA = 270oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 D = 0.5 RθJA(t) = r(t) + RθJA o 0.2 0.1 RθJA = 270 C/W 0.1 P(pk) 0.05 0.01 t1 0.02 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN371N Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4