FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.5 A, –20 V. Applications • Low gate charge • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 V • Compact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –1.5 A – Continuous (Note 1a) – Pulsed PD –6 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 0.75 (Note 1b) 0.48 Operating and Storage Junction Temperature Range W -55 to +150 °C 260 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .26 FDG326P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDG326P Rev D(W) FDG326P January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA On Characteristics –20 V µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –1.5 A VGS = –2.5 V, ID = –1.3 A VGS = –1.8 V, ID = –0.8 A VGS = –4.5 V, ID = –1.5 A, TJ = 125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –1.5 A 5.3 VDS = –10 V, V GS = 0 V, f = 1.0 MHz 467 pF 85 pF 38 pF –0.4 –0.9 –1.5 2 105 140 210 125 V mV/°C 140 180 250 200 –6 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –10 V, ID = 1 A, VGS = –4.5 V, RGEN = 6 Ω 8 16 ns 13 23 ns Turn–Off Delay Time 18 32 ns Turn–Off Fall Time 8 16 ns 4.4 7 nC VDS = –10 V, ID = –1.5 A, VGS = –4.5 V 1.0 nC 0.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.62 A (Note 2) –0.75 –0.62 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.) 170°C/W when mounted on a 1 in2 pad of 2 oz. copper. b.) 260°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG326P Rev D(W) FDG326P Electrical Characteristics FDG326P Typical Characteristics 2.5 VGS = -4.5V -3.0V -2.5V 5 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 4 -2.0V 3 -1.8V 2 1 -1.5V 2.25 VGS = -1.8V 2 -2.0V 1.75 1.5 -2.5V 1.25 -3.0V -4.5V 1 0.75 0 0 0.5 1 1.5 2 0 2.5 1 2 Figure 1. On-Region Characteristics. 4 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 1.4 ID = -1.5A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 ID = -0.8 A 0.3 0.25 0.2 TA = 125oC TA = 25oC 0.15 0.1 0.05 150 1 2 3 4 5 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC VDS = -5V o 25 C 5 -ID, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) 6 125oC 4 3 2 1 VGS = 0V 1 TA = 125oC 25oC -55oC 0.1 0.01 0.001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG326P Rev D(W) FDG326P Typical Characteristics 700 ID = -1.5A VDS = -5V -10V f = 1MHz VGS = 0 V 600 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 500 CISS 400 300 200 1 COSS 100 CRSS 0 0 0 1 2 3 4 5 0 6 5 Qg, GATE CHARGE (nC) 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 30 RDS(ON) LIMIT 10 24 100µs TA = 25oC 1ms POWER (W) -ID, DRAIN CURRENT (A) SINGLE PULSE RθJA = 260oC/W 10ms 100ms 1 1s VGS = -4.5V SINGLE PULSE RθJA = 260oC/W 0.1 DC 18 12 6 TA = 25oC 0.01 0.1 1 10 0 0.0001 100 0.001 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 260 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDG326P Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4