KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25°C) TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 5 A PC Collector Dissipation (Ta=25°C) 1.3 A PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 W TSTG Storage Temperature - 55 ~ 150 °C Parameter Value Units * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 100V, IE = 0 Min. Typ. Max. 10 Units µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 1.5A VCE = 2V, IC = 3A VCE(sat) *Collector-Emitter Saturation Voltage IC = 1.5A, IB = 1.5mA 0.9 1.2 VBE(sat) *Base-Emitter Saturation Voltage IC = 1.5A, IB = 1.5mA 1.5 2 tON Turn ON Time 0.5 µs tSTG Storage Time 2 µs tF Fall Time VCC = 40V, IC = 1.5A IB1 = - IB2 = 1.5mA RL = 27Ω 1 µs 2 2K 1K mA 20K V V * Pulse test: PW≤350µs, duty Cycle≤2% Pulsed hFE Classificntion Classification O Y G hFE1 2000 ~ 5000 4000 ~ 12000 6000 ~ 20000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1692 Typical Characteristics 100000 IB = 450uA IB = 400uA IB = 350uA IB = 300uA IB = 250uA 4 VCE = 2V Pulsed 00uA IB = 5 IB = 200u 3 hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT 5 A IB = 150uA IB = 100uA 2 IB = 50uA 1 10000 1000 0 0 1 2 3 4 100 0.01 5 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 100 10 Ic = 1000 IB Pulsed Ic(Pulse) 10 Ic(DC) IC[A], COLLECTOR CURRENT Dis s 10 nL im ite d Lim ite d V CE(sat) tio 1 m 20 0m s s s/b V BE(sat) 1 ipa s 0u 10 us 0 30 s 1m VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 0.1 o Tc=25 C Single Pulse 0.1 0.01 0.1 1 10 1 IC[A], COLLECTOR CURRENT 10 100 500 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Areas 20 160 PC[W], POWER DISSIPATION 140 dT[%], Ic DERATING 120 100 80 s/b DI 60 40 LIM ITE D SS IP A TI O 20 N LI M IT ED 15 10 5 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD1692 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E