KSD1588 KSD1588 Low Frequency Power Amplifier • Low Speed Switching • Complement to KSB1097 1 1.Base TO-220F 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 100 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 7 A ICP *Collector Current (Pulse) 15 A IB Base Current 3.5 A PC Collector Dissipation (Ta=25°C) 2 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 60 V 7 V * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 80V, IE = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 h FE1 hFE2 *DC Current Gain VCE = 1V, IC = 3A VCE = 1V, IC = 5A Min. Max. 10 Units µA 10 µA 40 20 200 VCE(sat) *Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 0.5 V VBE(sat) *Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE1 Classification Classification R O Y hFE1 40 ~ 80 80 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1588 Typical Characteristics 1.0 0.8 V CE = 1V IB = 14mA 0.7 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1000 IB = 18mA IB = 16mA 0.9 IB = 12mA 0.6 IB = 10mA 0.5 IB = 8mA 0.4 IB = 6mA 0.3 IB = 4mA 0.2 100 10 IB = 2mA 0.1 IB = 0 0 5 10 15 20 25 30 35 40 45 1 0.001 50 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE 1 10 Figure 2. DC current Gain 100 10 1 IC[A], COLLECTOR CURRENT Ic = 10 IB V BE(sat) 0.1 VCE (sat) 0.01 0.001 50 10 10 30 uS 0u S 0u S S s S 1m 0 m 0m 1 10 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 1 0.1 0.01 0.01 0.1 1 10 1 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 35 PC[W], POWER DISSIPATION 40 140 120 100 s/b 60 DI 40 LIM ITE D SS IP A TI O 20 N LI 100 1000 Figure 4. Safe OPerating Area 160 80 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT dT[%], Ic DERATING 0.1 IC [A], COLLECTOR CURRENT M IT ED 0 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Derating Curve Safe Operating Area ©2000 Fairchild Semiconductor International 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD1588 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E