FAIRCHILD TIP50

TIP47/48/49/50
TIP47/48/49/50
High Voltage and Switching Applications
• High Sustaining Voltage : VCEO(sus) = 250 - 400V
• 1A Rated Collector Current
NPN Silicon Transistor
TO-220
1
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: TIP47
: TIP48
: TIP49
: TIP50
VCEO
Collector-Emitter Voltage
VEBO
IC
1.Base
2.Collector
3.Emitter
Value
350
400
450
500
Units
V
V
V
V
250
300
350
400
V
V
V
V
Emitter-Base Voltage
5
V
Collector Current (DC)
1
A
ICP
Collector Current (Pulse)
2
A
IB
Base Current
0.6
A
W
: TIP47
: TIP48
: TIP49
: TIP50
PC
Collector Dissipation (TC=25°C)
40
PC
Collector Dissipation (Ta=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEX(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP47
: TIP48
: TIP49
: TIP50
Test Condition
Min.
Max.
IC = 30mA, IB = 0
ICEO
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VCE = 250V, IB = 0
VCE = 300V, IB = 0
1
1
1
1
mA
mA
mA
mA
ICEX
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 450V, VBE = 0
VCE = 500V, VBE = 0
1
1
1
1
mA
mA
mA
mA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1
mA
hFE
* DC Current Gain
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 10V, IC = 1A
fT
Current Gain Bandwidth Product
VCE =10V, IC = 0.2A
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
VCC = 400V
5IB1 = -2.5IB2 = IC = 6A
RL = 66.7Ω
250
300
350
400
30
10
Units
V
V
V
V
150
1
V
1.5
V
10
MHz
0.5
µs
3
µs
0.3
µs
* Pulse Test: PW≤300µs, duty Cycleµ2% Pulse
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TIP47/48/49/50
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
V CE = 10V
100
10
1
0.01
0.1
1
4
10
IC = 5 IB
VBE(sat)
1
V CE(sat)
0.1
0.01
0.01
0.1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
4
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
50
10
PC[W], POWER DISSIPATION
10
0µ
s
1m
0µS
S
50
1
C
D.
IC[A], COLLECTOR CURRENT
1
IC[A], COLLECTOR CURRENT
0.1
TIP47
TIP48
TIP49
TIP50
0.01
40
30
20
10
0
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 4. Power Derating
Rev. A, February 2000
TIP47/48/49/50
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Definition of Terms
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Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E