FAIRCHILD KSB707

KSB707/708
KSB707/708
Low Frequency Power Amplifier
• Low Speed Switching
• Industrial Use
• Complement to KSD568/569
TO-220
1
1.Base
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
: B707
: B708
Value
- 80
Units
V
- 60
- 80
V
V
V
VEBO
Emitter-Base Voltage
- 7.0
IC
Collector Current (DC)
- 7.0
A
ICP
*Collector Current (Pulse)
- 15
A
IB
Base Current (DC)
- 3.5
A
PC
Collector Dissipation (TC=25°C)
40
W
PC
Collector Dissipation (Ta=25°C)
1.5
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = - 60V, IE = 0
Typ.
Max.
- 10
Units
µA
- 10
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = - 1V, IC = - 3A
VCE = - 1V, IC = - 5A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 5A, IB = - 0.5A
- 0.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 5A, IB = - 0.5A
- 1.5
V
40
20
200
* Pulse Test: PW≤350µs, Duty Cycle≤2%
hFE Cassification
Classification
R
O
Y
hFE1
40 ~ 80
60 ~ 120
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB707/708
Typical Characteristics
1000
-1.0
VCE = -1V
IB = -18mA
IB = -16mA
-0.8
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = -20mA
IB = -14mA
IB = -12mA
-0.6
IB = -10mA
IB = -8mA
-0.4
IB = -6mA
IB = -4mA
-0.2
100
10
IB = -2mA
0
-10
-20
-30
-40
1
-0.001
-50
-0.01
-1
-10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
IC = 10·I B
-1
VBE(sat)
-1
ms
b
m
Li
d
it e
VCE(sat)
10
Dis 0ms
s
Lim ipatio
n
ite
d
us
s/
-0.1
10
10
30 0us
0u
s
s
IC[A], COLLECTOR CURRENT
50
-10
1m
VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE
-0.1
-0.1
-0.01
-0.01
-0.001
-0.01
-0.1
-1
-1
-10
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
50
160
PC[W], POWER DISSIPATION
140
dT[%], Ic DERATING
120
100
80
s/b
Di
ss
60
40
ip
a
tio
n
Lim
Li
m
ite
ite
d
d
20
0
40
30
20
10
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSB707/708
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E