MICROSEMI ARF461A

ARF461A(G)
ARF461B(G)
TO
-24
7
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
250V
150W
65MHz
The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 250 Volt, 40.68 MHz Characteristics:
•
Output Power = 150 Watts.
•
Gain = 13dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
• RoHS Compliant
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
Parameter
ARF461AG/BG
VDSS
Drain-Source Voltage
1000
VDGO
Drain-Gate Voltage
1000
ID
Unit
V
Continuous Drain Current @ TC = 25°C
6.5
A
VGS
Gate-Source Voltage
±30
V
PD
Total Power Dissipation @ TC = 25°C
250
W
0.50
°C/W
RθJC
TJ, TSTG
TL
Junction to Case
Operating and Storage Junction Temperature Range
-55 to 150
Lead Temperature: 0.063” from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Parameter
Min
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
1000
VDS(ON)
On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V)
6.5
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C)
250
IGSS
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
gfs
Forward Transconductance (VDS = 25V, ID = 3.25A)
3
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
VGS(TH)
Max
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Unit
V
μA
nA
mhos
5
Volts
6-2008
IDSS
Typ
050-5987 Rev D
Symbol
Dynamic Characteristics
Symbol
ARF461A/B
Parameter
Test Conditions
Min
Typ
CISS
Input Capacitance
VGS = 0V
1700
Coss
Output Capacitance
VDS = 50V
175
Crss
Reverse Transfer Capacitance
f = 1MHz
50
td(on)
Turn-On Delay Time
tr
td(off)
Turn-off Delay Time
tf
Fall Time
Unit
pF
8
VGS = 15V
Rise Time
Max
VDD = 0.5VDSS
5
ID = ID (Cont.) @ 25°C
21
RG = 1.6Ω
10.1
ns
Functional Characteristics
Symbol
Characteristic
GPS
1
Test Conditions
Min
Typ
f = 40.68MHz
13
15
dB
VGS = 0V VDD = 250V
70
75
%
Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
POUT = 150W
Max
Unit
No Degradation in Output Power
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
5000
30
Class C
VDD = 150V
25
1000
CAPACITANCE (pf)
20
GAIN (dB)
Ciss
Pout = 150W
15
10
500
Coss
100
Crss
50
5
ID, DRAIN CURRENT (AMPERES)
050-5987 Rev D
6-2008
8
6
.1
.5 1
5 10
50
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
26
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4
2
10
45
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
0
30
10
OPERATION HERE
(ON)
LIMITED BY R
DS
5
1mS
10mS
1
.5
.1
100uS
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
DC
ARF461A/B
25
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
VGS=15, 10, 8 & 6.5V
20
6V
15
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
5V
4.5V
5
4V
0
0.7
-50 -25
5.5V
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.50
0.9
0.30
0.20
0.10
0
10-5
0.7
0.5
0.3
0.1
0.05
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
Junction
temp. ( ”C)
Power
(Watts)
0.0284
0.00155F
0.165
0.00934F
0.307
0.128F
Case temperature
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
Zin (7)
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
ZOL (7)
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
Zin - Gate shunted with 257
IDQ = 100mA
ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V
6-2008
0.40
050-5987 Rev D
ZθJC, THERMAL IMPEDANCE (°C/W)
0.60
ARF461A/B
L4
Bias
0 - 12V
+
-
L3
C6
RF
Input
R1
C9
C5
+
C1 -- 1800pF + 1000pF 100V chips
250V
mounted at gate lead
-
C8
C7
L1
L2
C1
R2
C2
C4
C3
DUT
40.68 MHz Test Circuit
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 μF 500V ceramic chip
C9 -- 2200 pF 500 V chip
RF
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
Output L2 -- 7t #16 AWG .4" ID .5"L ~335nH
L3 -- 25t #24 AWG .25"ID ~2.2uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF461A/B
TO-247 Package Outline
4.69 .185
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Source
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
Device
ARF- A
ARF- B
Gate ------- Drain
Source ---- Source
050-5987 Rev D
6-2008
Drain ------- Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.