ISL9R2480G2 Data Sheet P RE LIMINARY November 2000 File Number 5005 24A, 800V Stealth™ Diode Features The ISL9R2480G2 is a Stealth™ diode optimized for low loss performance in high frequency applications. The Stealth family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. • Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Formerly developmental type TA49392. ISL9R2480G2 • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Applications • Switch Mode Power Supplies • PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • Snubber Diode PACKAGE TO-247 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • SMPS FWD Ordering Information PART NUMBER • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns BRAND Packaging R2480G2 JEDEC STYLE 2 LEAD TO-247 NOTE: When ordering, use the entire part number. ANODE Symbol CATHODE K CATHODE (BOTTOM SIDE METAL) A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 800 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 800 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 800 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 24 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 48 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave 1 Phase 60Hz) 240 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 160 W -55 to 175 oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ ©2001 Fairchild Semiconductor Corporation ISL9R2480G2 Rev. A ISL9R2480G2 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL MIN TYP MAX UNITS BV IR = 1mA 800 - - V VF IF = 24A - 2.5 3.0 V IF = 24A, TC = 125oC - 2.0 2.5 V VR = 600V - - 100 µA VR = 600V, TC = 125oC - - 1.0 mA IR TEST CONDITION IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns IF = 24A, dIF/dt = 100A/µs, VR = 30V - 34 45 ns IF = 24A, dIF/dt = 200A/µs, VR = 520V, TC = 25oC - 35 - ns IRRM - 4.2 - A QRR - 75 - nC ns trr trr trr IF = 24A, dIF/dt = 200A/µs, VR = 520V, TC = 125oC - 145 - S - 3.8 - IRRM - 5.0 - A QRR - 500 - nC - 72 - ns S - 1.96 - IRRM - 17.3 - trr IF = 24A, dIF/dt = 900A/µs, VR = 520V, TC = 125oC A QRR - 710 - nC dIM/dt - 600 - A/µs - 95 - pF - - 0.92 oC/W CJ VR = 10V, IF = 0A RθJC DEFINITIONS BV = Breakdown Voltage. VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (ta + tb). IRRM = Maximum reverse recovery current. QRR = Reverse recovery charge. S = Softness factor (tb / ta). dIM/dt = Maximum di/dt during tb. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = Duty cycle ©2001 Fairchild Semiconductor Corporation ISL9R2480G2 Rev. A ISL9R2480G2 TO-247 2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) E INCHES TERM. 3 A ØS ØP MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.180 0.190 4.58 4.82 NOTES - b 0.046 0.051 1.17 1.29 2, 3 Q ØR D L1 c b 2 2 1 e1 0.060 0.070 1.53 1.77 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 e1 b1 L b1 J1 1 BACK VIEW 0.438 BSC 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 5 L 0.620 0.640 15.75 16.25 - L1 0.145 0.155 3.69 3.93 1 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 2 dated 12-93. ©2001 Fairchild Semiconductor Corporation ISL9R2480G2 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H