KSE180/181/182 KSE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSE180 : KSE181 : KSE182 Value 60 80 100 Units V V V 40 60 80 V V V VCEO Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current 1 A PC Collector Dissipation (Ta=25°C) 1.5 W Collector Dissipation (TC=25°C) 12.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : KSE180 : KSE181 : KSE182 Test Condition IC = 10mA, IB = 0 ICBO Collector Cut-off Current : KSE180 : KSE181 : KSE182 : KSE180 : KSE181 : KSE182 VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150°C VCB = 80V, IE = 0 @ TC = 150°C VCB = 100V, IE = 0 @ TC = 150°C Min. Max. 40 60 80 Units V V V 0.1 0.1 0.1 0.1 0.1 0.1 µA µA µA mA mA mA 0.1 µA IEBO Emitter Cut-off Current VBE = 7V, IC = 0 hFE DC Current Gain VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA 0.3 0.9 1.7 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA 1.5 2.0 V V VBE(on) Base-Emitter On Voltage VCE = 1V, IC = 500mA fT Current Gain Bandwidth Product VCE = 10V, IC = 100mA Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz ©2001 Fairchild Semiconductor Corporation 50 30 12 250 1.2 50 V MHz 30 pF Rev. A1, January 2001 KSE180/181/182 Typical Characteristics 1000 5 IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA 4 3 2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB=200mA IB = 20mA 1 100 V CE = 5V V CE=1V 10 1 0 0 1 2 3 4 5 6 7 8 9 10 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE 10000 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC = 10IB 1 VBE(sat) V CE(sat) 0.1 0.01 0.01 f=0.1MHZ IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 0.1 100 10 1 0.1 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 16 10 ICMAX.(Pulse) Lim ited d ite m Li VCE MAX. KSE181 KSE182 KSE180 0.1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 12 10 8 6 4 2 0 0.01 1 PC[W], POWER DISSIPATION 14 B S/ IC[A], COLLECTOR CURRENT Dis sip atio n s s 5m s IC MAX.(DC) 1 0µ 0µ 10 50 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, January 2001 KSE180/181/182 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H2