FAIRCHILD KSE181

KSE180/181/182
KSE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
TO-126
1
NPN Epitaxial Silicon Transistor
1. Emitter
2.Collector
3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: KSE180
: KSE181
: KSE182
Value
60
80
100
Units
V
V
V
40
60
80
V
V
V
VCEO
Collector-Emitter Voltage : KSE180
: KSE181
: KSE182
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
3
A
ICP
Collector Current (Pulse)
6
A
IB
Base Current
1
A
PC
Collector Dissipation (Ta=25°C)
1.5
W
Collector Dissipation (TC=25°C)
12.5
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector -Emitter Breakdown Voltage
: KSE180
: KSE181
: KSE182
Test Condition
IC = 10mA, IB = 0
ICBO
Collector Cut-off Current : KSE180
: KSE181
: KSE182
: KSE180
: KSE181
: KSE182
VCB = 60V, IB = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCB = 60V, IE = 0 @ TC = 150°C
VCB = 80V, IE = 0 @ TC = 150°C
VCB = 100V, IE = 0 @ TC = 150°C
Min.
Max.
40
60
80
Units
V
V
V
0.1
0.1
0.1
0.1
0.1
0.1
µA
µA
µA
mA
mA
mA
0.1
µA
IEBO
Emitter Cut-off Current
VBE = 7V, IC = 0
hFE
DC Current Gain
VCE = 1V, IC = 100mA
VCE = 1V, IC = 500mA
VCE = 1V, IC = 1.5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
0.3
0.9
1.7
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
1.5
2.0
V
V
VBE(on)
Base-Emitter On Voltage
VCE = 1V, IC = 500mA
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 100mA
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 0.1MHz
©2001 Fairchild Semiconductor Corporation
50
30
12
250
1.2
50
V
MHz
30
pF
Rev. A1, January 2001
KSE180/181/182
Typical Characteristics
1000
5
IB = 180mA
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
4
3
2
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB=200mA
IB = 20mA
1
100
V CE = 5V
V CE=1V
10
1
0
0
1
2
3
4
5
6
7
8
9
10
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
10000
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
1000
IC = 10IB
1
VBE(sat)
V CE(sat)
0.1
0.01
0.01
f=0.1MHZ
IE=0
Cob[pF], CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
0.1
100
10
1
0.1
1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
16
10
ICMAX.(Pulse)
Lim
ited
d
ite
m
Li
VCE MAX.
KSE181
KSE182
KSE180
0.1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
12
10
8
6
4
2
0
0.01
1
PC[W], POWER DISSIPATION
14
B
S/
IC[A], COLLECTOR CURRENT
Dis
sip
atio
n
s
s
5m
s
IC MAX.(DC)
1
0µ
0µ
10
50
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, January 2001
KSE180/181/182
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2