AP4501GSD
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
▼ Simple Drive Requirement
N-CH BVDSS
D2
D1
▼ Low On-resistance
30V
RDS(ON)
D1
▼ Fast Switching Characteristic
27mΩ
ID
G2
S2
PDIP-8
7A
P-CH BVDSS
G1
-30V
RDS(ON)
S1
Description
49mΩ
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-5A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
±20
±20
V
3
7
-5
A
3
5.8
-4.2
A
40
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200504042
AP4501GSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Min. Typ. Max. Units
30
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=7A
-
-
27
mΩ
VGS=4.5V, ID=5A
-
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
12
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
ID=7A
-
9
13
nC
o
IGSS
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
645
800
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min. Typ. Max. Units
IS=1.7A, VGS=0V
-
-
1.2
V
IS=7A, VGS=0V,
-
16
-
ns
dI/dt=100A/µs
-
10
-
nC
AP4501GSD
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-30
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-5A
-
-
49
mΩ
VGS=-4.5V, ID=-3A
-
-
75
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5.3A
-
8
-
S
IDSS
Drain-Source Leakage Current ( Tj =25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current ( Tj =70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
RDS(ON)
VGS(th)
VGS=0V, ID=-250uA
Min. Typ. Max. Units
2
Static Drain-Source On-Resistance
o
IGSS
2
±100 nA
Qg
Total Gate Charge
ID=-5A
-
9
15
nC
Qgs
Gate-Source Charge
VDS=-24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
27
-
ns
tf
Fall Time
RD=15Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
460 730
pF
Coss
Output Capacitance
VDS=-25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Min. Typ. Max. Units
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
AP4501GSD
N-Channel
36
40
10V
8.0V
6.0V
5.0V
ID , Drain Current (A)
30
20
V G =4. 0 V
5.0V
24
12
V G =4.0V
10
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
2
3
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
100
I D =7A
V G = 10V
Normalized RDS(ON)
I D =7A
T A =25 ℃
70
RDS(ON) (mΩ )
10V
8.0V
6.0V
T A =150 o C
ID , Drain Current (A)
T A =25 o C
40
1.4
0.8
0.2
10
2
5
8
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
10
2.5
1
IS(A)
VGS(th) (V)
2
T J =150 o C
T J =25 o C
0.1
1.5
1
0.5
0.01
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
-50
0
50
T j , Junction Temperature (
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4501GSD
N-Channel
f=1.0MHz
12
1000
9
C iss
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =7.0A
6
C oss
C rss
100
3
0
10
0
4
8
12
16
1
7
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
19
25
31
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
10
1ms
ID (A)
13
V DS , Drain-to-Source Voltage (V)
10ms
100ms
1
1s
10s
DC
0.1
T A =25 o C
Single Pulse
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =90o C/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
AP4501GSD
P-Channel
40
36
-10V
-8.0V
-6.0V
T A =25 o C
-10V
-8.0V
-6.0V
o
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-5.0V
20
V G = - 4. 0 V
10
24
-5.0V
12
V G = - 4. 0 V
0
0
0
1
2
3
0
4
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1.8
I D =-5.0A
T A =25 ℃
I D =-5.0A
V G = -10V
Normalized R DS(ON)
1.6
RDS(ON) (mΩ )
90
60
1.4
1.2
1
0.8
0.6
30
3
5
7
9
-50
11
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
3
2.5
1
-IS(A)
T j =150 o C
-VGS(th) (V)
2
T j =25 o C
0.1
1.5
1
0.5
0.01
0
0.1
0.4
0.7
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4501GSD
P-Channel
f=1.0MHz
1000
I D =-5.0A
V DS =-24V
10
C iss
8
C oss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C rss
100
4
2
0
10
0
4
8
12
16
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
100us
10
-ID (A)
1ms
10ms
1
100ms
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
1s
10s
DC
0.1
o
T A =25 C
Single Pulse
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Gate Charge Characteristics
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Typical Capacitance Characteristics
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q