AP9915GK Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic 20V RDS(ON) 50mΩ ID S ▼ RoHS Compliant BVDSS 6.2A D SOT-223 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ±12 V Continuous Drain Current 3 6.2 A Continuous Drain Current 3 5 A 30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 3.2 W Linear Derating Factor 0.025 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 40 ℃/W 200615051-1/4 AP9915GK o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=6A - - 50 mΩ VGS=2.5V, ID=4A - - 80 mΩ 0.5 - 1.2 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=VGS, ID=250uA VDS=10V, ID=5A - 13 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±12V - - ±100 nA ID=10A - 5 8 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC 2 td(on) Turn-on Delay Time VDS=10V - 8 - ns tr Rise Time ID=10A - 55 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 10 - ns tf Fall Time RD=1Ω - 3 - ns Ciss Input Capacitance VGS=0V - 360 580 pF Coss Output Capacitance VDS=20V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 0.78 - Ω Min. Typ. IS=2.5A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2 3.t≦10sec , Surface mounted on 1 in copper pad of FR4 board. 2/4 AP9915GK 50 40 o T A =25 C T A =150 o C ID , Drain Current (A) ID , Drain Current (A) 4.5V 40 30 3.5V 20 2.5V 30 4.5V 20 3.5V 10 2.5V 10 V G =1.5V V G =1.5V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 ID=4A I D =6A T A =25 o C 1.6 Normalized RDS(ON) 70 RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) 60 50 V G =4.5V 1.4 1.2 1.0 20 40 0.8 0.6 30 1 2 3 4 5 -50 6 V GS , Gate-to-Source Voltage (V) 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 0.95 VGS(th) (V) 1.2 IS (A) 100 T j , Junction Temperature ( C) 100 1 T j =150 C 50 o Fig 3. On-Resistance v.s. Gate Voltage o 0 o T j =25 C 0.7 0.45 0.1 0.2 0.01 0 0.4 0.8 V SD , Source -to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9915GK f=1.0MHz 1000 I D =6A 12 C iss V DS =16V V DS =12V V DS =10V 10 8 C (pF) VGS , Gate to Source Voltage (V) 14 6 100 C oss C rss 4 2 10 0 0 2 4 6 8 10 12 1 14 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 0.1 10ms 100ms 1s 10s DC T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90 oC/W Per Unit Base 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4