AP9980H/J
Advanced Power
Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Fast Switching Performance
BVDSS
80V
RDS(ON)
45mΩ
ID
21.3A
G
S
Description
G D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9980J) are available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
21.3
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
13.4
A
80
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
41.7
W
Linear Derating Factor
0.33
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200406041
AP9980H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
80
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.07
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=12A
-
-
45
mΩ
VGS=4.5V, ID=8A
-
-
55
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=12A
-
20
-
S
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=64V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=12A
-
18
30
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
VDS=40V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
29
-
ns
tf
Fall Time
RD=3.3Ω
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1810 2900
pF
Coss
Output Capacitance
VDS=25V
-
135
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
96
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
-
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=12A, VGS=0V,
-
57
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
140
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9980H/J
60
50
10V
6.0V
5.0V
4.5V
ID , Drain Current (A)
50
10V
6.0V
5.0V
4.5V
T C =150 o C
ID , Drain Current (A)
T C =25 o C
40
30
20
40
30
20
V G =3.0V
10
10
V G =3.0V
0
0
0
3
6
9
12
15
0
18
3
9
12
15
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
54
2.2
I D = 12 A
V G =10V
2.0
ID=8A
o
T C =25 C
1.8
Normalized R DS(ON)
50
RDS(ON) (mΩ )
6
V DS , Drain-to-Source Voltage (V)
46
1.6
1.4
1.2
1.0
42
0.8
0.6
trr
0.4
38
3
5
7
9
-50
11
V GS , Gate-to-Source Voltage (V)
0
50
100
o
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
8
2.5
6
o
T j =150 C
IS(A)
VGS(th) (V)
2
o
T j =25 C
4
1.5
1
2
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Reverse Diode
150
AP9980H/J
f=1.0MHz
12
10000
I D = 12 A
C iss
V DS = 4 0V
V DS = 50 V
V DS = 64 V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thjc)
10us
100us
ID (A)
10
1ms
10ms
100ms
1
o
DC
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
t , Pulse Width (s)
Qrr
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
1
Charge
Fig 12. Gate Charge Waveform
Q