AP90T03GR Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS(ON) 4mΩ ID G 75A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@Tc=25℃ Continuous Drain Current, [email protected] 75 A ID@Tc=100℃ Continuous Drain Current, [email protected] 63 A 350 A 1 IDM Pulsed Drain Current PD@Tc=25℃ Total Power Dissipation 96 W Linear Derating Factor 0.7 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 1.3 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200120041 AP90T03GR Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 4 mΩ VGS=4.5V, ID=30A - - 6 mΩ 0.8 - 3 V VDS=10V, ID=30A - 55 - S Drain-Source Leakage Current (Tj=25 C) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ±20V - - ±100 nA ID=40A - 60 96 nC VDS=24V - 8.5 - nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VDS=VGS, ID=250uA o IDSS IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VGS=0V, ID=1mA Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 38 - nC td(on) Turn-on Delay Time2 VDS=15V - 14 - ns tr Rise Time ID=30A - 83 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 66 - ns tf Fall Time RD=0.5Ω - 120 - Ciss Input Capacitance VGS=0V - 4090 6540 pF Coss Output Capacitance VDS=25V - 1010 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 890 - pF Min. Typ. ns Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units V VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 trr Reverse Recovery Time IS=30A, VGS=0V, - 51 - ns - nC Qrr Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. dI/dt=100A/µs - 63 AP90T03GR 200 160 o 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 160 T C = 1 50 o C 140 ID , Drain Current (A) T C =25 C 120 V G =3.0V 80 10V 7.0V 5.0V 4.5V 120 100 V G =3.0V 80 60 40 40 20 0 0 0 1 2 0 3 1 Fig 1. Typical Output Characteristics 3 4 5 Fig 2. Typical Output Characteristics 2.0 5.0 1.8 I D =20A o Normalized R DS(ON) T C =25 C RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 4.5 I D = 45 A V G =10V 1.5 1.3 1.0 0.8 4.0 0.5 0.3 0.0 3.5 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 2 15 1.5 T j =25 o C VGS(th) (V) Is (A) 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 T j =150 o C 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) 10 1 0.5 5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1 -50 25 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 175 AP90T03GR f=1.0MHz 14 10000 I D = 40 A VGS , Gate to Source Voltage (V) 12 V DS =15V V DS =20V V DS =24V 10 C iss C (pF) 8 6 C oss 1000 C rss 4 2 0 100 0 20 40 60 80 100 120 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 ID (A) 100 1ms 10 10ms T c =25 o C Single Pulse 100ms DC Normalized Thermal Response (R thjc) 1000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q