AP6679GI Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Lower On-resistance G ▼ RoHS Compliant BVDSS -30V RDS(ON) 9mΩ ID -48A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-220CFM(I) The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -48 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -30 A 1 IDM Pulsed Drain Current 300 A PD@TC=25℃ Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200525051-1/4 AP6679GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V - -0.02 - V/℃ VGS=-10V, ID=-30A - - 9 mΩ VGS=-4.5V, ID=-24A - - 15 mΩ Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-30A - 43 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= ±25 - - ±100 nA ID=-30A - 40 67 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) Static Drain-Source On-Resistance o IGSS 2 VGS=0V, ID=-250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=-25V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 28 - nC VDS=-15V - 15 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-30A - 75 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 50 - ns tf Fall Time RD=0.5Ω - 90 - ns Ciss Input Capacitance VGS=0V - 3100 4590 pF Coss Output Capacitance VDS=-25V - 930 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 690 - pF Rg Gate Resistance f=1.0MHz - 2.7 4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-30A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-24A, VGS=0V, - 47 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 45 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP6679GI 280 150 -ID , Drain Current (A) -ID , Drain Current (A) -10V -8.0V T C =150 o C -10V -8.0V T C =25 o C 210 -6.0V 140 -4.5V -6.0V 100 -4.5V 50 V G =-3.0V 70 V G =-3.0V 0 0 0 1 2 3 0.0 4 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 35 1.8 I D =-30A V G =-10V Normalized RDS(ON) I D = -24A T C =25 ℃ RDS(ON) (mΩ ) 0.5 -V DS , Drain-to-Source Voltage (V) 25 15 1.4 1.0 0.6 5 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 30 Normalized -VGS(th) (V) 1.6 20 -IS(A) T j =150 o C T j =25 o C 10 0 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP6679GI f=1.0MHz 10000 I D = -30A V DS = -25V C iss 12 C (pF) -VGS , Gate to Source Voltage (V) 16 8 1000 C oss C rss 4 0 100 0 20 40 60 80 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100 -ID (A) 100us 1ms 10 10ms o T C =25 C Single Pulse 100ms DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4