VMB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB40-12S is Designed for 12.5 V, Medium Band Class C Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C E E • Common Emitter • PG = 10 dB at 40 W/175 MHz • Omnigold™ Metalization System ØC B D H I J MAXIMUM RATINGS F IC 5.0 A VCBO 36 V VCEO VEBO PDISS G #8-32 UNC-2A E MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 18 V B .980 / 24.89 C .370 / 9.40 .385 / 9.78 4.0 V D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 70 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.5 °C/W CHARACTERISTICS ORDER CODE: ASI10744 TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 18 V BVCES IC = 50 mA 36 V BVCBO IC = 50 mA 36 BVEBO IE = 10 mA 4.0 ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 5.0 A V 20 f = 1.0 MHz POUT = 40 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 200 --- 165 pF dB % REV. C 1/1