MRF10350 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. PACKAGE STYLE .400 2NL FLG A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C FEATURES: C E F • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System B H L G I J K P E MAXIMUM RATINGS 31 A IC B M N D IM M IN IM U M M A X IM U M inches / m m inches / m m A .0 2 0 / 0 .5 1 .0 3 0 / 0 .7 6 B .1 0 0 / 2 .5 4 C .3 7 6 / 9 .5 5 D .1 1 0 / 2 .7 9 .1 3 0 / 3 .3 0 E .3 9 5 / 1 0 .0 3 .4 0 7 / 1 0 .3 4 .3 9 6 / 1 0 .0 6 VCBO 65 V F .1 9 3 / 4 .9 0 VCES 65 V G .4 5 0 / 1 1 .4 3 1590 W @ TC = 25 °C I .6 4 0 / 1 6 .2 6 J .8 9 0 / 2 2 .6 1 .9 1 0 / 2 3 .1 1 K .3 9 5 / 1 0 .0 3 .4 1 5 / 1 0 .5 4 PDISS TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 0.11 °C/W CHARACTERISTICS .6 6 0 / 1 6 .7 6 L .0 0 4 / 0 .1 0 .0 0 7 / 0 .1 8 M .0 5 2 / 1 .3 2 .0 7 2 / 1 .8 3 N .1 1 8 / 3 .0 0 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 P TC = 25 °C NONETEST CONDITIONS SYMBOL .1 2 5 / 3 .1 8 H MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 60 mA 65 V BVCES IC = 60 mA 65 V BVEBO IE = 10 mA 3.5 V ICBO VCE = 36 V hFE VCE = 5.0 V IC = 5.0 A PG ηC VCC = 50 V POUT = 350 W 25 20 f = 1090 MHz 8.5 40 --9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA dB % REV. C 1/1