UHBS60-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.0 dB at 60 W/960 MHz • Omnigold™ Metalization System .040x45° B C 2XØ.130 4X .025 R .115 .430 D E F .125 G MAXIMUM RATINGS H I IC 9.0 A VCBO 50 V VCEO 26 V VCES 50 V VEBO 4.0 V PDISS 190 W @ TC = 25 °C J K -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 0.9 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 MAXIMUM ORDER CODE: ASI10673 TC = 25 °C NONETEST CONDITIONS SYMBOL DIM L MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 50 V BVCES IC = 50 mA 50 V BVCEO IC = 50 mA 26 V BVEBO IE = 10 mA 3.0 V ICES VCE = 20 V 10 mA ICBO VCB = 30 V 5 mA hFE VCE = 5.0 V 100 --- Cob VCB = 24 V 75 pF PG ηC VCE = 24 V IC = 1.0 A 20 f = 1.0 MHz POUT = 60 W f = 960 GHz 7.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. B 1/1