ALR325 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG(A) A 4x .062 x 45° DESCRIPTION: 2xB .040 x 45° C The ASI ALR325 is Designed for F E D G FEATURES: I • Input Matching Network • • Omnigold™ Metalization System L N 18.75 A 55 V VCC PDISS 730 W @ TC = 25 C O TSTG -65 OC to +200 OC θ JC 0.10 OC/W SYMBOL MAXIMUM inches / mm inches / mm A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 .396 / 10.06 .193 / 4.90 .510 / 12.95 .490 / 12.45 .100 / 2.54 I O CHARACTERISTICS MINIMUM H -65 C to +250 C TJ DIM G O P M MAXIMUM RATINGS IC 2xR H J K J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P ORDER CODE: ASI10516 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 15 mA 3.0 V ICES VCE = 50 V hFE VCE = 5.0 V IC = 5.0 A VCC = 45 V GHz POUT = 325 W PG ηC 10 f = 1.2 to 1.4 30 mA --- --- 6.5 dB 38 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1