ASI ASI10516

ALR325
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG(A)
A
4x .062 x 45°
DESCRIPTION:
2xB
.040 x 45°
C
The ASI ALR325 is Designed for
F
E
D
G
FEATURES:
I
• Input Matching Network
•
• Omnigold™ Metalization System
L
N
18.75 A
55 V
VCC
PDISS
730 W @ TC = 25 C
O
TSTG
-65 OC to +200 OC
θ JC
0.10 OC/W
SYMBOL
MAXIMUM
inches / mm
inches / mm
A
.135 / 3.43
.145 / 3.68
B
.100 / 2.54
.120 / 3.05
C
.050 / 1.27
D
.376 / 9.55
E
.110 / 2.79
.130 / 3.30
F
.395 / 10.03
.407 / 10.34
.396 / 10.06
.193 / 4.90
.510 / 12.95
.490 / 12.45
.100 / 2.54
I
O
CHARACTERISTICS
MINIMUM
H
-65 C to +250 C
TJ
DIM
G
O
P
M
MAXIMUM RATINGS
IC
2xR
H
J
K
J
.690 / 17.53
.710 / 18.03
K
.890 / 22.61
.910 / 23.11
L
.003 / 0.08
.006 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
ORDER CODE: ASI10516
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCES
IC = 50 mA
65
V
BVEBO
IE = 15 mA
3.0
V
ICES
VCE = 50 V
hFE
VCE = 5.0 V
IC = 5.0 A
VCC = 45 V
GHz
POUT = 325 W
PG
ηC
10
f = 1.2 to 1.4
30
mA
---
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6.5
dB
38
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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