MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W(PEP) • Omnigold™ Metalization System Ø.125 NOM. C B B E H E D G F MAXIMUM RATINGS I J IC 16 A VCBO K MAXIMUM DIM MINIMUM inches / mm inches / mm 100 V A .220 / 5.59 .230 / 5.84 VCEO 50 V C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 VEBO 4.0 V E PDISS TJ .125 / 3.18 B 233 W @ TC = 25 °C -65°C to +200 °C .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K TSTG -65 °C to +150 °C θJC 0.75 °C/W CHARACTERISTICS SYMBOL L O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 100 V BVCES IC = 100 mA 100 V BVCEO IC = 200 mA 50 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V Cob VCB = 50 V f = 1.0 MHz GP IMD ηC VCE = 50 V ICQ = 3.3 A POUT = 150 W (PEP) f = 30 MHz IC = 5.0 A 10 220 13 --- 300 pF -32 dB dBc % 15 -35 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 80 REV. A 1/1