ASI SD1018-06

SD1018-06
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1018-06 is Designed for
Class C Amplifier Applications in VHF
Mobile Radios.
PACKAGE STYLE .380 4L FLG
FEATURES:
B
• PG = 4.5 dB Typ. at 40 W /175 MHz
• ηC = 60% Typ. at 40 W /175 MHz
• Omnigold™ Metalization System
.112 x 45°
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
MAXIMUM RATINGS
IC
6.0 A
VCBO
36 V
VCEO
18 V
VEBO
4.0 V
PDISS
TJ
E
F
I
GH
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
MAXIMUM
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
.385 / 9.78
80 W @ TC = 25 °C
E
F
.004 / 0.10
.006 / 0.15
-65 °C to +200 °C
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
.180 / 4.57
.240 / 6.10
.255 / 6.48
.280 / 7.11
I
TSTG
-65 °C to +150 °C
θJC
2.2 °C/W
CHARACTERISTICS
J
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 20 mA
36
V
BVCEO
IC = 100 mA
18
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
Cob
VCB = 15 V
PG
ηC
VCC = 12.5 V
PIN = 14 W
2.5
IC = 1.0 A
5.0
---
f = 1.0 MHz
POUT = 40 W
f = 175 MHz
200
4.5
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
mA
pF
dB
%
REV. A
1/1