SD1018-06 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1018-06 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .380 4L FLG FEATURES: B • PG = 4.5 dB Typ. at 40 W /175 MHz • ηC = 60% Typ. at 40 W /175 MHz • Omnigold™ Metalization System .112 x 45° A E C Ø.125 NOM. FULL R J .125 B E C D MAXIMUM RATINGS IC 6.0 A VCBO 36 V VCEO 18 V VEBO 4.0 V PDISS TJ E F I GH DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 MAXIMUM C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 80 W @ TC = 25 °C E F .004 / 0.10 .006 / 0.15 -65 °C to +200 °C G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .280 / 7.11 I TSTG -65 °C to +150 °C θJC 2.2 °C/W CHARACTERISTICS J TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 36 V BVCEO IC = 100 mA 18 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V Cob VCB = 15 V PG ηC VCC = 12.5 V PIN = 14 W 2.5 IC = 1.0 A 5.0 --- f = 1.0 MHz POUT = 40 W f = 175 MHz 200 4.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA pF dB % REV. A 1/1